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High Resolution X-Ray Reflectometry and Diffraction of CaF2/Si(111) Structures Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

E. Abramof ,
S. O. Ferreira ,
P. H. O Rappl ,
A. Y. Ueta ,
C. Boschetti ,
H. Closs ,
P. Motisuke  and
I. N. Bandeira
E. Abramof
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE, Laboratório Associado de Sensores e Materiais - LAS, CP 515, 12201-970 São José dos Campos - SP, Brazil. [email protected]
S. O. Ferreira
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE, Laboratório Associado de Sensores e Materiais - LAS, CP 515, 12201-970 São José dos Campos - SP, Brazil. [email protected]
P. H. O Rappl
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE, Laboratório Associado de Sensores e Materiais - LAS, CP 515, 12201-970 São José dos Campos - SP, Brazil. [email protected]
A. Y. Ueta
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE, Laboratório Associado de Sensores e Materiais - LAS, CP 515, 12201-970 São José dos Campos - SP, Brazil. [email protected]
C. Boschetti
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE, Laboratório Associado de Sensores e Materiais - LAS, CP 515, 12201-970 São José dos Campos - SP, Brazil. [email protected]
H. Closs
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE, Laboratório Associado de Sensores e Materiais - LAS, CP 515, 12201-970 São José dos Campos - SP, Brazil. [email protected]
P. Motisuke
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE, Laboratório Associado de Sensores e Materiais - LAS, CP 515, 12201-970 São José dos Campos - SP, Brazil. [email protected]
I. N. Bandeira
Affiliation:
Instituto Nacional de Pesquisas Espaciais - INPE, Laboratório Associado de Sensores e Materiais - LAS, CP 515, 12201-970 São José dos Campos - SP, Brazil. [email protected]
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Abstract

CaF2 layers were grown by molecular beam epitaxy on differently prepared Si(111) substrates. X-ray reflectivity spectra were measured and fitted. From the fitting process, the thickness of the CaF2 layer was precisely (within 1 Å) determined and the CaF2/Si interface roughness was also obtained. This roughness was used as an evaluation parameter for the quality of the layers. The CaF2/Si sample from which the intentional oxide was desorpted at 800°C inside the growth chamber exhibited the most clear x-ray reflectivity spectrum with very well resolved interference fringes. The epitaxial relations of the CaF2/Si samples grown at temperatures between 250 and 700°C were determined from x-ray diffraction analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 661
Copyright
Copyright © Materials Research Society 1998

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