Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-08T07:18:50.049Z Has data issue: false hasContentIssue false

High Resolution Diffraction Imaging of Mercuric Iodide: Demonstration of the Necessity for Alternate Crystal Processing Techniques for Highly Purified Material

Published online by Cambridge University Press:  15 February 2011

Bruce Steiner
Affiliation:
NIST, MAT A 256, Gaithersburg, Maryland., 20899
Lodewijk Van Den Berg
Affiliation:
EG&G Instruments, Oak Ridge, Tennessee 37830
Uri Laor
Affiliation:
Nuclear Research Centre, Beersheva, Israel
Get access

Abstract

The overall crystalline lattice uniformity in recently available, highly purified mercuric iodide single crystals has been shown to be impacted by crystal handling techniques that were previously satisfactory. High resolution diffraction imaging of the surface regularity of crystals of various levels of purity and growth orientation shows: 1) that the newer materials have a generally lower level of precipitates, 2) that the incidence of these precipitates is now closely correlated with growth direction, and 3) that the deformation resistance and resulting sensitivity to crystal handling procedures are also closely correlated with these factors in this soft material.

As a result, gentler cutting and polishing procedures have been developed and are shown to be effective in preserving overall lattice regularity in the new material. The polishing required to remove residual surface scratches affects the lattice orientation of the softer, precipitate-free regions, while not affecting those regions with detectible levels of precipitates. These results correlate closely with the electrical properties of devices made from these crystals.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Schieber, M., Ortale, C., van den Berg, L., Schnepple, W., Keller, L, Wagner, C.N.J., Yellon, W., Ross, F., Georgeson, G., and Milstein, F., Nucl. Inst. Meth. Phys. Res. A 283, 172 (1989)Google Scholar
2. Petroff, P. M., Hu, Yu Peng, and Milstein, Frederick, J. Appl. Phys 66, 2525 (1989)Google Scholar
3. Lamonds, H.A., Nucl. Inst. Meth. 213, 5 (1983)Google Scholar
4. Steiner, Bruce, Dobbyn, Ronald C., Black, David, Burdette, Harold, Kuriyama, Masao, Spal, Richard, Berg, Lodewijk van den, Fripp, Archibald, Simchick, Richard, Lal, Ravindra B., Batra, Ashok, Matthiesen, David, and Ditchek, Brian, Proc. SPIE 1557,156 (1991)Google Scholar
5. Steiner, Bruce, Dobbyn, Ronald C., Black, David, Burdette, Harold, Kuriyama, Masao, Spal, Richard, Berg, Lodewijk van den, Fripp, Archibald, Simchick, Richard, Lal, Ravindra B., Batra, Ashok, Matthiesen, David, and Ditchek, Brian, Proc. J. Res. NIST 96, 305 (1991)Google Scholar
6. Steiner, B., Dobbyn, R., Black, D., Burdette, H., Kuriyama, M., Spal, R., van den Berg, L., Fripp, A., Simchick, R., Lal, R., Batra, A., Matthiesen, D., and Ditchek, B., NIST Tech. Note 1287 (1991)Google Scholar
7. Steiner, Bruce and Dobbyn, Ronald C., Bull. Am. Cer. Soc. 70, 1017 (1991)Google Scholar
8. Gits, S. and Authier, A., J. Cryst. Growth 58, 473 (1982)Google Scholar
9. Gits, S., Nucl. Inst. Meth. 213, 43 (1983)Google Scholar
10. Steiner, Bruce, Kuriyama, Masao, and Dobbyn, Ronald C., Prog. Cryst. Growth and Char. 20, 189 (1990)Google Scholar
11. Milstein, J., Farber, B., Kim, K., van den Berg, L., and Schnepple, W. F.. Nucl. Inst. Meth. 213, 65 (1983)Google Scholar
12. Burger, A., Morgan, S., He, C., Silberman, E., van den Berg, L., Ortale, C., Franks, L., and Schieber, M., J. Cryst. Growth 99, 988 (1990)Google Scholar