Hostname: page-component-745bb68f8f-grxwn Total loading time: 0 Render date: 2025-02-04T15:22:17.583Z Has data issue: false hasContentIssue false
  • English
  • Français

High Resolution Analysis of Structure and Chemistry of Grain Boundaries in Silicon

Published online by Cambridge University Press:  25 February 2011

M. J. Kim  and
R. W. Carpenter
M. J. Kim
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287
R. W. Carpenter
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287
Get access

Abstract

High resolution electron microscopy and high spatial resolution analytical electron microscopy were used to analyze the structure and chemistry of a Σ3 {111} twin boundary in cast polysilicon and a Σ13 (510), [001] tilt boundary in a Si bicrystal. Twin boundaries in cast polysilicon were associated with lattice defects and discrete second phase precipitates. The precipitate was single phase amorphous and faceted on the Si {111} planes. Nanospectroscopy showed mem to be substoichiometric oxide. Similar oxide precipitates, but with different morphology, were also observed on the Σ13 tilt boundary in Si bicrystal, indicating that tilt grain boundaries and steps on twin boundaries were effective heterogeneous sites for nucleation of oxygen containing precipitates. The observed Σ13 tilt boundary exhibited a coincident site lattice periodicity but had an aperiodic interface dislocation core structure. Oxygen that diffused into the boundary in regions where precipitation did not occur may have played a role in modifying the GB core structures, resulting in aperiodicity. For both cases, a detailed analysis of grain boundary atomic structure and precipitate morphology is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 157
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kamins, T., Raicu, B. and Thompson, C.V., Eds, Polysilicon Thin Films and Interfaces (Mater. Res. Soc. Proc. 182, Pittsburgh, PA, 1990), (see references therein).Google Scholar
2. Moller, H.J., Strunk, H.P. and Werner, J.H., Eds, Polycrvstalline Semiconductors (Berlin, Springer, 1989), (see references therein).Google Scholar
3. Wong, C.Y., Thompson, C.V. and Tu, K.N., Eds, Polysilicon Films and Interfaces (Mater. Res. Soc. Proc. 106, Pittsburgh, PA, 1988), (see references therein).Google Scholar
4. Stadelmann, P., Ultramicroscopy 21, 131 (1987).Google Scholar
5. Long, N.J., Skiff, W.M., Higgs, A., Carpenter, R.W. and CLyman, E., in Proc. 43rd Annual EMS A Meeting, edited by Bailey, G.W. (San Francisco Press, San Francisco, CA, 1985) p. 408.Google Scholar
6. Das Chowdhury, K., Carpenter, R.W. and Weiss, J.K., in Proc. 47th Annual EMSA Meeting, edited by Bailey, G.W. (San Francisco Press, San Francisco, CA, 1989) p. 428.Google Scholar
7. Hartley, M.P., MS thesis, Arizona State University, 1991.Google Scholar
8. Homstra, J., Physica 25, 409 (1959).Google Scholar
9. Hasson, G.C. and Goux, C., Scripta Met. 5, 889 (1971).CrossRefGoogle Scholar
10. Kim, M.J. and Carpenter, R.W., J. Mater. Res. 5, 347 (1990).CrossRefGoogle Scholar
11. Rouvière, J.L. and Bourret, A., in Proc. International Symposium on Polvcrystalline Semiconductors, edited by Moller, H.J., Strunk, H.P. and Werner, J.H. (Springer, Berlin, 1989) pp. 8, 19.Google Scholar