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High resistivity isolation for AlGaN/GaN HEMT using Al double-implantation

Published online by Cambridge University Press:  17 February 2014

Andrzej Taube ,
Maciej Kozubal ,
Jakub Kaczmarski ,
Marcin Juchniewicz ,
Adam Barcz ,
Jan Dyczewski ,
Rafał Jakieła ,
Elżbieta Dynowska ,
Michał Adam Borysiewicz  and
Paweł Prystawko
...Show all authors
Andrzej Taube
Affiliation:
Institute of Electron Technology, Al.Lotników 32/46, 02-668 Warsaw, Poland. Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland.
Maciej Kozubal
Affiliation:
Institute of Electron Technology, Al.Lotników 32/46, 02-668 Warsaw, Poland.
Jakub Kaczmarski
Affiliation:
Institute of Electron Technology, Al.Lotników 32/46, 02-668 Warsaw, Poland.
Marcin Juchniewicz
Affiliation:
Institute of Electron Technology, Al.Lotników 32/46, 02-668 Warsaw, Poland.
Adam Barcz
Affiliation:
Institute of Electron Technology, Al.Lotników 32/46, 02-668 Warsaw, Poland. Institute of Physics, Polish Academy of Sciences, Al.Lotników 32/46, 02-668 Warsaw, Poland
Jan Dyczewski
Affiliation:
Institute of Physics, Polish Academy of Sciences, Al.Lotników 32/46, 02-668 Warsaw, Poland
Rafał Jakieła
Affiliation:
Institute of Physics, Polish Academy of Sciences, Al.Lotników 32/46, 02-668 Warsaw, Poland
Elżbieta Dynowska
Affiliation:
Institute of Electron Technology, Al.Lotników 32/46, 02-668 Warsaw, Poland. Institute of Physics, Polish Academy of Sciences, Al.Lotników 32/46, 02-668 Warsaw, Poland
Michał Adam Borysiewicz
Affiliation:
Institute of Electron Technology, Al.Lotników 32/46, 02-668 Warsaw, Poland.
Paweł Prystawko
Affiliation:
Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland. TopGaN Ltd., Sokołowska 29/37, 01-142 Warsaw, Poland
Jakub Jasiński
Affiliation:
Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland.
Paweł Borowicz
Affiliation:
Institute of Electron Technology, Al.Lotników 32/46, 02-668 Warsaw, Poland. Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224Warsaw, Poland
Eliana Kamińska
Affiliation:
Institute of Electron Technology, Al.Lotników 32/46, 02-668 Warsaw, Poland.
Anna Piotrowska
Affiliation:
Institute of Electron Technology, Al.Lotników 32/46, 02-668 Warsaw, Poland.
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Abstract

The paper reports on the fabrication of electrical isolation for planar AlGaN/GaN high electron mobility transistor using Al double-implantation. The implantation was performed using Al+ ions with energies of 800 keV and 300 keV with doses of 1.5×1013 ion/cm2 and 1×1013 ion/cm2, respectively. Electrical measurements have shown that after implantation the sheet resistance was 1.8×1011 Ω/□ and increased to 1.17×1014 Ω/□ and 3.29×1012 Ω/□ after annealing at 400°C and 600°C respectively. Annealing at 800°C decreased the sheet resistance to 1.38×108 Ω/□. Characterization by XRD, Raman and photoluminescence spectroscopy give evidence that implantation damages the crystal lattice, yielding insulating properties. It has been demonstrated that the isolation is stable up to 600°C.

Keywords

ion-implantationIII-VN
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1635: Symposium T – Compound Semiconductor Materials and Devices , 2014 , pp. 9 - 14
Copyright
Copyright © Materials Research Society 2014 

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References

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