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High Resistivity InAIN by Nitrogen or Oxygen Implantation

Published online by Cambridge University Press:  26 February 2011

J. C. Zolper ,
S. J. Pearton ,
C. R. Abernathy  and
C. B. Vartuli
J. C. Zolper
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0603,
S. J. Pearton
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
C. R. Abernathy
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
C. B. Vartuli
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
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Abstract

We report on the isolation properties of In0.75Al0.25N implanted with either N or O for several doses and post-implant anneal temperatures. Sheet resistance versus anneal temperature data are reported for the various implants with a maximum sheet resistance of <1×109 Ω/□ achieved for a high dose N-implant annealed at 600 or 700 °C and <5×108 Ω/□ achieved for a high dose O-implant annealed at 600 °C. These sheet resistances correspond to a greater than three order of magnitude increase over the as-grown values. The compensating defect level for the highest resistance N-implanted sample has an estimate ionization level 580 meV below the conduction band edge. Implant isolation of InAIN is also compared to oxygen implant isolation of InxGa1-xN — where only a 50 to 100 fold increase in sheet resistance is observed — to study the effect of Al in the isolation scheme.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 485
Copyright
Copyright © Materials Research Society 1995

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