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High Resistivity GaN Formed by Ion Implantation

Published online by Cambridge University Press:  17 March 2011

Jun Kudo ,
Yuji Hishida ,
Masanori Watanabe ,
Tomoaki Hatayama  and
Takashi Fuyuki
Jun Kudo
Affiliation:
Ion Engineering Research Institute Corporation, Hirakata, Osaka 573-0128, Japan
Yuji Hishida
Affiliation:
Ion Engineering Research Institute Corporation, Hirakata, Osaka 573-0128, Japan
Masanori Watanabe
Affiliation:
Ion Engineering Research Institute Corporation, Hirakata, Osaka 573-0128, Japan
Tomoaki Hatayama
Affiliation:
Nara Institute of Science and Technology, Ikoma, Nara 630-0101, Japan
Takashi Fuyuki
Affiliation:
Nara Institute of Science and Technology, Ikoma, Nara 630-0101, Japan
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Abstract

Advanced high frequency devices using GaN-based semiconductor require the technology to form high resistivity regions with high thermal stability to electrically isolate the active elements from surroundings, as well as from the underlying substrate. The present paper describes the preparation of thermally stable, high resistivity GaN layers by ion implantation. It was confirmed that C or Zn implantation yielded high resistivity layers. In particular, Zn implantation yielded the layers with resistivity on the order of 1010 cm, which could be sustained at temperatures as high as 1000.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.30
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Binari, S.C., Dietrich, H.B., Kelner, G., Rowland, L.B., Doverspike, K., and Wickenden, D.K., J.Appl.Phys. 78, 3008 (1995)Google Scholar
2. Kunihiro, K., Kasahara, K., Takahashi, Y., and Ono, Y., Extended Abstract of 1999 ICSSDM, pp 208-209Google Scholar
3. Cao, X.A., Pearton, S.J., Dang, G.T., Zhang, A.P., Ren, F., Wilson, R.G., Hove, J.M. Van, J.Appl.Phys. 87, 1091 (2000)Google Scholar
4. Reeves, G.R., Solid State Electronics. 123, 483 (1986)Google Scholar
5. Kuznetsov, N.I., Nikolaev, A.E., and Zubrilov, A.S., Appl.Phys.Lett. 75, 3138 (1999)Google Scholar
6. Zolper, J.C., Pearton, S.J., Abernathy, C.R., Vartuli, C.B., Yuan, C., and Stall, A., Electrochemical Society Proceedings, vol 95–21, 144 (1995)Google Scholar
7. Zolper, J.C., GaN and Related Materials, ed. Pearton, S.J. (Gordon and Breach, 1997) ch.12Google Scholar