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High Remanent Polarization in Laser Ablated SrBi2Nb2O9 Thin Films

Published online by Cambridge University Press:  15 February 2011

Rasmi R. Das ,
P. Bhattacharya ,
W. Pérez  and
Ram S. Katiyarxya
Rasmi R. Das
Affiliation:
Physics Department, University of Puerto Rico, San Juan, Puerto Rico 00931-3343
P. Bhattacharya
Affiliation:
Physics Department, University of Puerto Rico, San Juan, Puerto Rico 00931-3343
W. Pérez
Affiliation:
Physics Department, University of Puerto Rico, San Juan, Puerto Rico 00931-3343
Ram S. Katiyarxya
Affiliation:
Physics Department, University of Puerto Rico, San Juan, Puerto Rico 00931-3343
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Abstract

Pulsed-laser-deposition technique was used to grow SrBi2Nb2O9 (SBN) thin films on platinized silicon substrates. The effect of annealing temperature and film thicknesses on the structural and electrical properties has been studied. The average grain size and rms surface roughness was found to increase with increasing annealing temperature. The degree of orientation along the (200) direction was increased with the film thicknesses. The remanent polarization was found to be increased with the film thicknesses and was attributed to the selftexturing characteristics of SBN films. Thin films with higher thickness (∼570 nm) exhibited high value of remanent polarization (∼38 ν/cm2) with coercive field of 185 kV/cm. There was a reduction of coercive field with the film thickness. The dielectric constant was observed to be independent of the film thickness. The increase in loss tangent with increasing film thicknesses was attributed to the reduction of dielectric breakdown strength of the films. The SBN thin films showed minimal fatigue characteristics and suitable material for memory devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 780: Symposium Y – Advanced Optical Processing of Materials , 2003 , Y1.7
Copyright
Copyright © Materials Research Society 2003

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