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High quantum efficiency of photoluminescence in GaN and ZnO

Published online by Cambridge University Press:  01 February 2011

Michael A. Reshchikov ,
Xing Gu ,
Bill Nemeth ,
Jeff Nause  and
Hadis Morkoç
Michael A. Reshchikov
Affiliation:
[email protected], Virginia Commonwealth University, Physics, 1020 West Main St, Richmond, VA, 23284, United States, 804-828-1613, 804-828-7073
Xing Gu
Affiliation:
[email protected], Virginia Commonwealth University, Electrical Engineering, United States
Bill Nemeth
Affiliation:
[email protected], Cermet, Inc., United States
Jeff Nause
Affiliation:
[email protected], Cermet, Inc., United States
Hadis Morkoç
Affiliation:
[email protected], Virginia Commonwealth University, Electrical Engineering, United States
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Abstract

The quantum efficiency (QE) of photoluminescence (PL) has been estimated in GaN and ZnO samples. A Si-doped GaN layer grown by molecular beam epitaxy (MBE) exhibited the highest QE of about 90% at low temperatures. Recombination via the shallow donor-acceptor pair transitions dominated in this sample. In contrast, a bulk ZnO crystal with the QE of PL of about 85% contained almost no defect- or impurity-related PL signatures besides the emission attributed to free and bound excitons. The sources of radiative and nonradiative recombination in GaN and ZnO are discussed.

Keywords

luminescencedefectsoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF23-11
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Reshchikov, M. A. and Korotkov, R. Y., Phys. Rev. B 64, 115205 (2001).CrossRefGoogle Scholar
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5. Reshchikov, M. A., Moon, Y. T., Gu, X., Nemeth, B., Nause, J., and Morkoç, H., Unstable luminescence in GaN and ZnO, Presented at 23rd International Conference on Defects in Semiconductors, Awaji Island, Japan, July 24–29, 2005, accepted for publication in Physica B.Google Scholar