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High Quality, Low Cost Continuous Poly-GaN Film on Si and Glass Substrates Produced by Spin Coating

Published online by Cambridge University Press:  01 February 2011

Huaqiang Wu ,
Athanasios Bourlinos ,
Emmanuel P. Giannelis  and
Michael G. Spencer
Huaqiang Wu
Affiliation:
401 Phillips Hall, School of Electrical & Computer Engineering, Cornell University, Ithaca, NY 14853
Athanasios Bourlinos
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Emmanuel P. Giannelis
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Michael G. Spencer
Affiliation:
401 Phillips Hall, School of Electrical & Computer Engineering, Cornell University, Ithaca, NY 14853
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Abstract

Polycrystalline GaN layers have been produced on generic substrates via spin coating. Based on X-ray diffraction and SEM analyses, the GaN particles appear to be highly oriented on the surface. Strong luminescence from these layers has been demonstrated by cathodoluminescence. The source material was high purity, high quality GaN powder produced in our laboratory. Methyl cellulose was successfully used to disaggregate GaN particles in the dispersion. The colloidal dispersions were spun onto different substrates: Si, sapphire and glass. The dispersant was removed by annealing the sample at 500°C. The layer thickness was controlled by varying the number of spin coatings. Applications for spindeposited GaN layers include the fields of light emitting devices and random lasers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E8.2
Copyright
Copyright © Materials Research Society 2005

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References

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