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Published online by Cambridge University Press: 01 February 2011
Polycrystalline GaN layers have been produced on generic substrates via spin coating. Based on X-ray diffraction and SEM analyses, the GaN particles appear to be highly oriented on the surface. Strong luminescence from these layers has been demonstrated by cathodoluminescence. The source material was high purity, high quality GaN powder produced in our laboratory. Methyl cellulose was successfully used to disaggregate GaN particles in the dispersion. The colloidal dispersions were spun onto different substrates: Si, sapphire and glass. The dispersant was removed by annealing the sample at 500°C. The layer thickness was controlled by varying the number of spin coatings. Applications for spindeposited GaN layers include the fields of light emitting devices and random lasers.