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High Quality Growth of SiO2 at 80° C by Electron Cyclotron Resonance (ECR) for Thin Film Transistors

Published online by Cambridge University Press:  17 March 2011

Riyaz Rashid ,
A. J. Flewitt ,
D. Grambole ,
U. Kreiβig ,
J. Robertson  and
W. I. Milne
A. J. Flewitt
Affiliation:
Engineering Department, Cambridge UniversityTrumpington Street, Cambridge CB2 1PZ, U.K
D. Grambole
Affiliation:
Institute for Ion Beam Physics and Materials Science Rossendorf Research Centre, Dresden, Germany
U. Kreiβig
Affiliation:
Institute for Ion Beam Physics and Materials Science Rossendorf Research Centre, Dresden, Germany
J. Robertson
Affiliation:
Engineering Department, Cambridge UniversityTrumpington Street, Cambridge CB2 1PZ, U.K
W. I. Milne
Affiliation:
Engineering Department, Cambridge UniversityTrumpington Street, Cambridge CB2 1PZ, U.K
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Abstract

Silicon dioxide (SiO2) films have been deposited at 80°C in an Electron Cyclotron Resonance (ECR) plasma reactor from a gas phase combination of He, O2 and SiH4. The ECR configuration provides a highly ionised plasma (∼1016 m−3) with low ion energies (∼10eV) that gives efficient dehydrogenation of the growing material whilst minimizing defect creation. The physical characterisation of the material gives a refractive index of 1.46, an etch rate in buffered HF below 3 nm/s and a hydrogen content of less than 2 at.%. Electrical tests reveal a resistivity in excess of 1014Ωcm, an average breakdown strength of 5 MV/cm, and fixed charge and interface state densities of 1011 cm−2 and 1012 eV−1cm−2 respectively. This has been achieved using a O2:SiH4 flow ratio ≍ 2:1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D13.1.1
Copyright
Copyright © Materials Research Society 2001

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