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High Pressure Studies of Quantum Well Emission and Deep Emission in GaInP(ordered)-GaAs Heterostructures

Published online by Cambridge University Press:  10 February 2011

S. H. Kwok ,
P. Y. Yu ,
K. Uchida  and
T. Arai
S. H. Kwok
Affiliation:
Physics Department, University of California, Berkeley, CA 94720 and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720.
P. Y. Yu
Affiliation:
Physics Department, University of California, Berkeley, CA 94720 and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720.
K. Uchida
Affiliation:
Department of Communications and Systems, University of Electro-communications, Chofu, Tokyo, Japan.
T. Arai
Affiliation:
Tsukuba Laboratories, Nippon Sanso Co., 10 Ohkubo, Tsukuba, Ibaraki, 300–33, Japan.
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Abstract

We report on a high pressure study of emission from a series of GaInP(ordered)/GaAs heterostructures. A so-called “deep emission” band at 1.46 eV is observed in all our samples. At high excitation power, quantum well emission emerges in only one structure where thin GaP layers are inserted on both sides of the GaAs well. From the pressure dependent emission in this sample we have determined its band alignments. The role of the GaP layers in suppressing the deep emission is elucidated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 499: Symposium DD – High Pressure Materials Research , 1997 , 195
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Suzuki, T., Gomyo, A., Iijima, S., Kobayashi, K., Kawata, S., Hino, I. and Yuasa, T., Jpn. J. Appl. Phys. 27, 2098 (1988).Google Scholar
2. Kroemer, H., Chien, Wu-Yi, Harris, J. S. and Edwall, D., Appl. Phys. Lett. 36, 295 (1980).Google Scholar
3. Zeman, J., Martinez, G., Yu, P. Y. and Uchida, K., Phys. Rev. B 35, R13428 (1997).Google Scholar
4. Feng, S. L., Feng, S. L., Krynicki, J., Donchev, V., Bourgoin, J. C., Forte-Poisson, M. D., Brylinski, C., Delage, S., Blanek, H. and Alaya, S., Semicond. Sci. Technol. 8, 2092 (1993) and reference therein.Google Scholar
5. Froyen, S., Zunger, A. and Mascarenhas, A., Appl. Phys. Lett. 68, 2852 (1996).Google Scholar
6. Omnes, F. and Razeghi, M., Appl. Phys. Lett. 59, 1034 (1991).Google Scholar
7. Guimaraes, F. E., Elsner, B., Westphalen, R., Spangenberg, B., Geelen, H. J., and Wilkene, B. J., J. Cryst. Growth 124, 199 (1992).Google Scholar
8. Bhat, R., Kozn, M. A., Brasil, M. J. S. P., Nahory, R. E., Palmstrom, C. J. and Wilkene, B. J., J. Cryst. Growth 124, 576 (1992).Google Scholar
9. Tsai, C. Y., Moser, M., Geng, C., Harle, V., Forner, T., Michler, P., Hangleiter, A. and Scholz, F., J. Cryst. Growth 145, 786 (1994).Google Scholar
10. Liu, Q., Derksen, S., Lindner, A., Scheffer, F., Prost, W. and Tegude, F.-J., J. Appl. Phys. 77, 1154(1995).Google Scholar
11. Uchida, U.K., Arai, T. and Matsumoto, K., J. Appl. Phys. 81, 771 (1997).Google Scholar
12. Kwok, S. H., Yu, P. Y., Uchida, K. and Arai., T., J. Appl. Phys. 82, 3630 (1997).Google Scholar
13. Kwok, S. H., Yu, P. Y., Uchida, K. and Arai., T., Appl. Phys. Lett. 71, 1110 (1997).Google Scholar
14. Landoldt-Boernstein, Tables, Semiconductors: Physics of Group IV elements and III-V Compounds (Springer-Verlag, 1986), edited by Madelung, O..Google Scholar
15. Leroux, M., Fille, M. L., Gil, B., Landesman, J. P. and Garcia, J. C., Phys. Rev. B 47, 6465 (1993).Google Scholar
16. Whitaker, M. F., Dunstan, D. J., Missous, M., and Gonzalez, L., Phys. Status Solidi B 198, 349(1996).Google Scholar