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High Pressure Method for Identification of Crystal Elastic Imperfections - Generation of Defects in Silicon Single Crystals Under Pressure

Published online by Cambridge University Press:  21 February 2011

J. Jung  and
M. Lefeld-Sosnowska
J. Jung
Affiliation:
High Pressure Research Centre, Polish Academy of Sciences, 01–142 Warsaw, Sokolowska 29/37;
M. Lefeld-Sosnowska
Affiliation:
Institute of Experimental Physics, University of Warsaw, 00–681 Warsaw, Hoża 69, Poland.
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Abstract

New method for identification of the kind of elastic stress-free crystal imperfections which are not visible by standard X-ray and electron microscopy methods was presented. The method is based on the high pressure annealing creating large stresses at defect sites,followed by X-ray topography. This method was applied in structural defects studies of high quality silicon single crystals and allowed to determine the composition and structure of precipitates in silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 22: Symposium NY – High Pressure in Science and Technology , 1983 , 311
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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