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High Power SiC MESFETs

Published online by Cambridge University Press:  01 February 2011

Christopher Harris ,
Andrei O Konstantinov ,
Jan-Olov Svedberg ,
Ian Ray  and
Christer Hallin
Christopher Harris
Affiliation:
[email protected], INTRINSIC Semiconductor Corp., SiC Devices, 22660 Executive Drive, Dulles, VA, 20166, United States, 7034374000, 7034374757
Andrei O Konstantinov
Affiliation:
[email protected], INTRINSIC Semiconductor AB, Osterogatan 3, Kista, N/A, 164 40, Sweden
Jan-Olov Svedberg
Affiliation:
[email protected], INTRINSIC Semiconductor AB, Osterogatan 3, Kista, N/A, 164 40, Sweden
Ian Ray
Affiliation:
[email protected], INTRINSIC Semiconductor AB, Osterogatan 3, Kista, N/A, 164 40, Sweden
Christer Hallin
Affiliation:
[email protected], INTRINSIC Semiconductor Corp., 22660 Executive Drive, Dulles, VA, 20166, United States
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Abstract

The development of high power, high efficiency silicon carbide RF MESFETs is reported. High power densities of over 3W/mm have been measured for devices with total power output in excess of 25W. The devices have been fabricated using a novel lateral epitaxy technique. The MESFET employs a buried p-type depletion stopper in order to suppress short channel effects and increase the operation voltage. The use of the depletion stopper also allows high RF signal gain, while maintaining high voltage operation capability. Single-cell components measured on-wafer demonstrate an Ft of 10 GHz and a high unilateral gain.

Packaged 6-mm RF transistors have been evaluated using amplifier circuits designed for operation in classes A, AB or C. Operation in class AB demonstrated a saturated power of 20 W and a P1dB of 15W with a linear gain of over 16 dB at Vdd of 60 V for 2.25 GHz operation. Maximum drain efficiency is 56% for class AB operation, 48% at 1 dB compression point and 72% for class C at 2.25 GHz.

Keywords

semiconductingdeviceschemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B10-14
Copyright
Copyright © Materials Research Society 2006

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References

[1] Konstantinov, A., Ericsson, P. and Harris, C.I.: Mater. Sci Forum Vol. 389–393, (2001) p. 375 Google Scholar
[2] Harris, C. and Konstantinov, A.: US patent 6,127,695.Google Scholar