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High Performance ITO Nanoparticles as Nanoink for Printing as a Substitute Process of Sputtering

Published online by Cambridge University Press:  14 July 2014

Atsushi Muramatsu ,
Kiyoshi Kanie ,
Takafumi Sasaki  and
Masafumi Nakaya
Atsushi Muramatsu
Affiliation:
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
Kiyoshi Kanie
Affiliation:
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
Takafumi Sasaki
Affiliation:
Mitsui Mining & Smelting Co., Ltd.
Masafumi Nakaya
Affiliation:
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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Abstract

Generally, indium-tin-oxides (ITO) thin film is prepared by the sputtering process with ITO target, but only 20% of ITO yielded from the target is deposited on the substrate. Namely, about 80% ITO is exhausted by the deposition elsewhere far from the substrate. The recycling process is limited so that ca 20% ITO of the starting target is lost without any recovery. Even if the recycling of ITO has been carried out in this process, we should prepare ITO target of 5 times more than apparent use of ITO on film. If we change it to printing process from the sputtering, the reduction in ITO use is expected as ca. 50%, considering the increase in film thickness by printing. Our target technology also includes ITO nanoink for the project. As a result, monodispersed ITO nanoparticles (NPs) with a cubic shape were fabricated by using quaternary ammonium hydroxide-assisted metal hydroxide organogels. These NPs have perfect uniformity in size with beautiful shape, and perfect single crystalline structure including Sn. As we were attempted to make thin film with ITO nanoink, it was successfully fabricated below 200 nm in thickness and the resistivity was drastically decreased below 1.0 x 10-3 Ω cm after heat treatments. GZO nanoink as substitute of ITO has also been developed.

Keywords

thin filmthermal conductivitynanoscale
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1699: Symposium LL – Transparent Electrodes , 2014 , mrss14-1699-ll06-04
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

Sasaki, T., Nakaya, M., Kanie, K., Muramatsu, A., Mater. Trans., 2009, 50, 2808.10.2320/matertrans.M2009236CrossRefGoogle Scholar
Endo, Y., Sasaki, T., Kanie, K., and Muramatsu, A., Chem. Lett., 2008, 37, 1278.10.1246/cl.2008.1278CrossRefGoogle Scholar
Sasaki, T., Endo, Y., Nakaya, M., Kanie, K., Nagatomi, A., Tanoue, K., Nakamura, R., and Muramatsu, A., J. Mater. Chem., 2010, 20, 8153.10.1039/c0jm01338bCrossRefGoogle Scholar
Kanie, K., Sasaki, T., Nakaya, M., and Muramatsu, A., Chem. Lett., 2013, 42, 738.10.1246/cl.130263CrossRefGoogle Scholar
Hartnagel, H. L., Dawar, A. L., Jain, A. K., Jagdish, C., Semiconducting Transparent Thin Films, IOP Publishing, Bristol, 1995.Google Scholar
Hamberg, I., Granqvist, C. G., J. Appl. Phys., 1986, 60, R123.10.1063/1.337534CrossRefGoogle Scholar
Chiou, B. S., Hseih, S. T., Thin Solid Films, 1993, 229, 146.10.1016/0040-6090(93)90357-UCrossRefGoogle Scholar
Lin, Y. C., Li, J. Y., Yen, W. T., Appl. Surf. Sci., 2008, 254, 3262.10.1016/j.apsusc.2007.11.006CrossRefGoogle Scholar
Gessert, T. A., Yoshida, Y., Fesenmaier, C. C., Coutts, T. J., J. Appl. Phys., 2009, 105, 083547.10.1063/1.3116542CrossRefGoogle Scholar
Hong, S. J., Han, J. I., Curr. Appl. Phys., 2006, 6S1, e206.10.1016/j.cap.2006.01.041CrossRefGoogle Scholar
Hong, S. J., Kim, Y. H., Han, J. I., IEEE Trans. Nanotechnol., 2008, 7, 172.10.1109/TNANO.2008.917846CrossRefGoogle Scholar
Bühler, G., Thölmann, D., Feldmann, C., Adv. Mater., 2007, 19, 2224.10.1002/adma.200602102CrossRefGoogle Scholar
Sugimoto, T., Wang, Y., Itoh, H., Muramatsu, A., Colloids Surf. A, 1998, 134, 265.10.1016/S0927-7757(97)00103-9CrossRefGoogle Scholar
Kanie, K., Sugimoto, T., Chem. Commun., 2004, 1584.10.1039/B404220DCrossRefGoogle Scholar
Niederberger, M., Acc. Chem. Res., 2007, 40, 793.10.1021/ar600035eCrossRefGoogle Scholar
Song, J. E., Lee, D. K., Kim, H. W., Kim, Y. I., Kang, Y. S., Colloids Surf. A, 2005, 257-258, 539.10.1016/j.colsurfa.2004.07.037CrossRefGoogle Scholar
Kim, K. Y., Park, S. B., Mater. Chem. Phys., 2004, 86, 210.10.1016/j.matchemphys.2004.03.012CrossRefGoogle Scholar
Usui, H., Sasaki, T., Koshizaki, N., J. Phys. Chem. B, 2006, 110, 12890.10.1021/jp061866fCrossRefGoogle Scholar
Lee, J. S., Choi, S. C., J. Eur. Ceram. Soc., 2005, 25, 3307.10.1016/j.jeurceramsoc.2004.08.022CrossRefGoogle Scholar
Yang, J., Li, C., Quan, Z., Kong, D., Zhang, X., Yang, P., Lin, J., Cryst. Growth Des., 2008, 8, 695.10.1021/cg070340xCrossRefGoogle Scholar
Okuya, M., Ito, N., Shiozaki, K., Thin Solid Films, 2007, 515, 8656.10.1016/j.tsf.2007.03.148CrossRefGoogle Scholar
Devi, P. S., Chatterjee, M., Ganguli, D., Mater. Lett., 2002, 55, 205.10.1016/S0167-577X(01)00647-4CrossRefGoogle Scholar
Aoki, Y., Huang, J., Kunitake, T., J. Mater. Chem., 2006, 16, 292.10.1039/B512225BCrossRefGoogle Scholar
Seo, W. S., Jo, H. H., Lee, K., Park, J. T., Adv. Mater., 2003, 15, 795.10.1002/adma.200304568CrossRefGoogle Scholar
Liu, Q., Lu, W., Ma, A., Tang, J., Lin, J., Fang, J., J. Am. Chem. Soc., 2005, 127, 5276.10.1021/ja042550tCrossRefGoogle Scholar
Lee, C. H., Kim, M., Kim, T., Kim, A., Paek, J., Lee, J. W., Choi, S. Y., Kim, K., Park, J. B., Lee, K., J. Am. Chem. Soc., 2006, 128, 9326.10.1021/ja063227oCrossRefGoogle Scholar
Zhang, W., Huang, Z., Li, T., Tang, Q., Ma, D., Qian, Y., Chem. Lett., 2005, 34, 118.10.1246/cl.2005.118CrossRefGoogle Scholar
Kanehara, M., Koike, H., Yoshinaga, T., Teranishi, T., J. Am. Chem. Soc., 2009, 131, 17736.10.1021/ja9064415CrossRefGoogle Scholar
Gilstrap, R. A. Jr., Capozzi, C. J., Carson, C. G., Gerhardt, R. A., Summers, C. J., Adv. Mater., 2008, 20, 4163.Google Scholar
Gilstrap, R. A. Jr., Summers, C. J., Thin Solid Films, 2009, 518, 1136.10.1016/j.tsf.2009.06.065CrossRefGoogle Scholar
Sugimoto, T., Khan, M. M., Muramatsu, A., Itoh, H., Colloids Surf. A, 1993, 79, 233.10.1016/0927-7757(93)80178-HCrossRefGoogle Scholar
Sugimoto, T., Monodispersed Particles, Elsevier, Amsterdam, 2001. pp. 376–388.Google Scholar
Yang, J., Li, C., Quan, Z., Zhang, C., Yang, P., Li, Y., Yu, C., Lin, J. J. Phys. Chem. C, 2008, 112, 12777.10.1021/jp803945wCrossRefGoogle Scholar
Yang, J., Li, C., Quan, Z., Kong, D., Zhang, X., Yang, P., Lin, J., Cryst. Growth Des., 2008, 8, 695.10.1021/cg070340xCrossRefGoogle Scholar
Ba, J., Rohlfing, D. F., Feldhoff, A., Brezesinski, T., Djerdj, I., Wark, M., Niederberger, M., Chem. Mater., 2006, 18, 2848.10.1021/cm060548qCrossRefGoogle Scholar
Frank, G., Köstlin, H., Appl. Phys. A, 1982, 27, 197.10.1007/BF00619080CrossRefGoogle Scholar
Tomonaga, H., Morimoto, T., Thin Solid Films, 2001, 392, 243.10.1016/S0040-6090(01)01035-5CrossRefGoogle Scholar