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High Performance Hydrogenated Amorphous Silicon n-i-p Photo-diodes on Glass and Plastic Substrates by Low-temperature Fabrication Process

Published online by Cambridge University Press:  01 February 2011

Kyung Ho Kim ,
Yuriy Vygranenko ,
Mark Bedzyk ,
Jeff Hsin Chang ,
Tsu Chiang Chuang ,
Denis Striakhilev ,
Arokia Nathan ,
Gregory Heiler  and
Timothy Tredwell
Kyung Ho Kim
Affiliation:
[email protected], University of Waterloo, Electrical and Computer Engineering, 200 University Ave.W, Waterloo, N2L 3G1, Canada, 1-519-569-9900, 1-519-746-3077
Yuriy Vygranenko
Affiliation:
[email protected], Univerity of Waterloo, Electrical and Computer Engineering, 200 Univeristy Ave. W, Waterloo, N2L 3G1, Canada
Mark Bedzyk
Affiliation:
[email protected], Eastman Kodak Company, Rochester, NY, 14652-3487, United States
Jeff Hsin Chang
Affiliation:
[email protected], Univerity of Waterloo, Electrical and Computer Engineering, 200 Univeristy Ave. W, Waterloo, N2L 3G1, Canada
Tsu Chiang Chuang
Affiliation:
[email protected], Univerity of Waterloo, Electrical and Computer Engineering, 200 Univeristy Ave. W, Waterloo, N2L 3G1, Canada
Denis Striakhilev
Affiliation:
[email protected], Univerity of Waterloo, Electrical and Computer Engineering, 200 Univeristy Ave. W, Waterloo, N2L 3G1, Canada
Arokia Nathan
Affiliation:
[email protected], University College, London Centre for Nanotechnology, London, WC1H OAH, United Kingdom
Gregory Heiler
Affiliation:
[email protected], Eastman Kodak Company, Rochester, NY, 14652-3487, United States
Timothy Tredwell
Affiliation:
[email protected], Eastman Kodak Company, Rochester, NY, 14652-3487, United States
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Abstract

We report on the fabrication and characterization of hydrogenated amorphous silicon (a-Si:H) films and n-i-p photodiodes on glass and PEN plastic substrates using low-temperature (150°C) plasma-enhanced chemical vapor deposition. Process conditions were optimized for the i-a-Si:H material which had a band gap of ~1.73 eV and low density of states (of the order 1015 cm-3). Diodes with 0.5 μm i-layer demonstrate quantum efficiency ~70%. The reverse dark current of the diodes on glass and PEN plastic substrate is ~10-11 and below 10-10 A/cm2, respectively. We discuss the difference in electrical characteristics of n-i-p diodes on glass and PEN in terms of bulk- and interface-state generation currents.

Keywords

sensoramorphousphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A19-05
Copyright
Copyright © Materials Research Society 2007

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