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High Optical Quality GaN Nanopillars Grown on (111) Si Using Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

Agam Prakash Vajpeyi ,
G. Tsiakatouras ,
A Adikimenakis ,
K. Tsagaraki ,
M Androulidaki  and
Alexandros Georgakilas
Agam Prakash Vajpeyi
Affiliation:
[email protected], Institute of Electronic Structure and Laser (IESL), FORTH, Microelectronics Research Center, Herakilon-Crete, Gr, P.O. Box 2208, 71110,, Herakilon, 71110, Greece, +302810394145, +302810394145
G. Tsiakatouras
Affiliation:
[email protected], Institute of Electronic Structure and Laser (IESL), FORTH, Microelectronics Research Center, and Department of Physics, University of Crete, Greece, Herakilon, 71110, Greece
A Adikimenakis
Affiliation:
[email protected], Institute of Electronic Structure and Laser (IESL), FORTH, Microelectronics Research Center, and Department of Physics, University of Crete, Greece, Herakilon, 71110, Greece
K. Tsagaraki
Affiliation:
[email protected], Institute of Electronic Structure and Laser (IESL), FORTH, Microelectronics Research Center, and Department of Physics, University of Crete, Greece, Herakilon, 71110, Greece
M Androulidaki
Affiliation:
[email protected], Institute of Electronic Structure and Laser (IESL), FORTH, Microelectronics Research Center, and Department of Physics, University of Crete, Greece, Herakilon, 71110, Greece
Alexandros Georgakilas
Affiliation:
[email protected], Institute of Electronic Structure and Laser (IESL), FORTH, Microelectronics Research Center, and Department of Physics, University of Crete, Greece, Herakilon, 71110, Greece
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Abstract

The spontaneous growth of GaN nanopillars on (111) Si by plasma assisted molecular beam epitaxy has been investigated. The growth of GaN nanopillars on Si is driven by the lattice mismatch strain energy on Si and the high surface energy of the nitrogen stabilized (0001) GaN surface. A higher growth rate of nanopillars compared to a compact GaN film suggests the diffusion of Ga atoms from the uncovered substrate areas to the nucleated GaN nanopillars. The GaN nanopillars were characterized by field-emission scanning electron microscopy (FE-SEM), photoluminescence, and micro Raman spectroscopy. SEM image revealed that average diameter of GaN nanopillars was in the range of 70-100nm and an average height of 600nm. The photoluminescence (PL) spectra indicate the good emission property of the nanopillars. The low temperate PL spectrum exhibited an emission peak at 3.428eV besides a sharp excitonic peak. PL and Raman spectra indicate that GaN nanopillars are fully relaxed from lattice and thermal strain.

Keywords

molecular beam epitaxy (MBE)nanostructureoptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1068: Symposium C – Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates , 2008 , 1068-C06-08
Copyright
Copyright © Materials Research Society 2008

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