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High Efficiency Large Area a-Si:H and a-SiGe:H Multi-junction Solar Cells Using MVHF at High Deposition Rate

Published online by Cambridge University Press:  31 January 2011

Xixiang Xu ,
Dave Beglau ,
Scott Ehlert ,
Yang Li ,
Tining Su ,
Guozhen Yue ,
Baojie Yan ,
Ken Lord ,
Arindam Banerjee  and
Jeff Yang
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Xixiang Xu
Affiliation:
[email protected], United Solar Ovonic LLC, Troy, Michigan, United States
Dave Beglau
Affiliation:
[email protected], United Solar Ovonic LLC, Troy, Michigan, United States
Scott Ehlert
Affiliation:
[email protected], United Solar Ovonic LLC, Troy, Michigan, United States
Yang Li
Affiliation:
[email protected], United Solar Ovonic LLC, Troy, Michigan, United States
Tining Su
Affiliation:
[email protected], United Solar Ovonic LLC, Troy, Michigan, United States
Guozhen Yue
Affiliation:
[email protected], United Solar Ovonic LLC, Troy, Michigan, United States
Baojie Yan
Affiliation:
[email protected], United Solar Ovonic LLC, Troy, Michigan, United States
Ken Lord
Affiliation:
[email protected], United Solar Ovonic LLC, Troy, Michigan, United States
Arindam Banerjee
Affiliation:
[email protected], United Solar Ovonic LLC, Troy, Michigan, United States
Jeff Yang
Affiliation:
[email protected], United Solar Ovonic LLC, Troy, Michigan, United States
Subhendu Guha
Affiliation:
[email protected], United Solar Ovonic LLC, Troy, Michigan, United States
Peter G. Hugger
Affiliation:
[email protected], University of Oregon, Physics, Eugene, Oregon, United States
David J. Cohen
Affiliation:
[email protected], University of Oregon, Physics, Eugene, Oregon, United States
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Abstract

We have developed high efficiency large area a-Si:H and a-SiGe:H multi-junction solar cells using a Modified Very High Frequency (MVHF) glow discharge process. We conducted a comparative study for different cell structures, and compared the initial and stable performance and light-induced degradation of solar cells made using MVHF and RF techniques. Besides high efficiency, the MVHF cells also demonstrate superior light stability, showing <10% degradation after 1000 hour of one-sun light soaking at 50 °C. We also studied light-induced defect level and hydrogen evolution characteristics of MVHF deposited a-SiGe:H films and compared them with the RF deposited films.

Keywords

amorphousSiGe
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1153: Symposium A – Amorphous and Polycrystalline Thin Film Silicon Science and Technology–2009 , 2009 , 1153-A07-01
Copyright
Copyright © Materials Research Society 2009

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References

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