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High Dose Carbon Ion Implantation Studies in Silicon

Published online by Cambridge University Press:  28 February 2011

K. Srikanth ,
M. Chu ,
S. Ashok ,
N. Nguyen  and
K. Vedam
K. Srikanth
Affiliation:
Department of Engineering Science & Mechanics and Center for Electronic Materials and Devices, The Pennsylvania State University, University Park, PA 16802
M. Chu
Affiliation:
Department of Engineering Science & Mechanics and Center for Electronic Materials and Devices, The Pennsylvania State University, University Park, PA 16802
S. Ashok
Affiliation:
Department of Engineering Science & Mechanics and Center for Electronic Materials and Devices, The Pennsylvania State University, University Park, PA 16802
N. Nguyen
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802, USA
K. Vedam
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802, USA
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Abstract

The electrical properties of crystalline Si (c-Si) subjected to high-dose (1E17 cm-2) implantation of C with varying post- anneal conditions have been investigated. The electrical barrier formation and carrier transport across the implanted layer have been studied using metal-implanted layer-Si structures. In the as-implanted samples, a Schottky diode-like behaviour is seen but with a very high diode ideality factor. The well-known influence of ion damage on the Si surface barrier is clearly evident, but in addition we see the domination of transport by a Si-C buried layer formed after annealing . Spectroscopic ellipsometry measurements and FTIR spectroscopy confirm the formation of buried Si-C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 483
Copyright
Copyright © Materials Research Society 1988

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