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High Current Density Electron Beam Induced Desorption

Published online by Cambridge University Press:  25 February 2011

S.D. Berger ,
J.M. Macaulay ,
L.M. Brown  and
R.M. Allen
S.D. Berger
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
J.M. Macaulay
Affiliation:
Cavendish Laboratory, Madingley Road, Cambridge, CB3 OHE, UK
L.M. Brown
Affiliation:
Cavendish Laboratory, Madingley Road, Cambridge, CB3 OHE, UK
R.M. Allen
Affiliation:
Cavendish Laboratory, Madingley Road, Cambridge, CB3 OHE, UK
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Abstract

High current density electron beam irradiation with a small probe can lead to the production of holes in a variety of inorganic materials. We review some of the experimental observations of the hole formation process and compare these to the predictions of a simple model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 515
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

[1] Broers, A.N., Proc, R. Soc. Lond. A, 416, 1 (1988)Google Scholar
[2] Murray, A., Isaacson, M. and Adesida, I., Appl. Phys Lett., 45, 589 (1984)Google Scholar
[3] Humphreys, C.J., Salisbury, I.G., Berger, S.D., Timsit, R.S. and Mochel, M.E., Inst. Phys. Conf. Ser. No. 78, 1 (Published by the Institute of Physics: Bristol and Philadelphia 1985)Google Scholar
[4] Hobbs, L.W. in Ouantitative Electron Microscopy edited by Chapman, J.M. and Craven, A.J. (Sottish Unerversities Summer School in Physics Publications, Edinburgh, 1984)Google Scholar
[5] Salisbury, I.G., Timsit, R.S., Berger, S.D. and Humphreys, C.J., Appl. Phys. Lett., 45, 12, 1289 (1984)CrossRefGoogle Scholar
[6] Berger, S.D., Salisbury, I.G., Milne, R.H., Imeson, D. and Humphreys, C.J., Phil. Mag. B, 55, 3, 341 (1987)Google Scholar
[7] Murray, A., Scheinfein, M. and Isaacson, M., J. Vac. Sci. Technol. B, 3, 1, 367 (1985)CrossRefGoogle Scholar
[8] Berger, S.D., Macaulay, J.M. and Brown, L.M., Phil. Mag. Lett, 56, 5, 179 (1987)Google Scholar
[9] Macaulay, J.M. and Berger, S.D., Microelectronic Engineering 6, 527 (Published by North-Holland 1987)Google Scholar
[10] See the article by Smith, D.J. in this volume.Google Scholar
[11] Chadderton, L.T. in Radiation Damage in Crystals (Methuen: London, 1965)Google Scholar
[12] Catlow, C.R.A., Diller, K.M. and Hobbs, L.W., Phil. Mag. 42, 2, 123 (1980)Google Scholar
[13] Jain, U. and Lidiard, A.B., Phil. Mag. 31, 1, 245 (1977)Google Scholar