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Hierarchical computational approaches of the effects of interstitial and vacancy loops on plastic deformation

Published online by Cambridge University Press:  16 March 2011

Tomohito Tsuru
Affiliation:
Nuclear Science and Engineering Directorate, Japan Atomic Energy Agency, 2-4 Shirakata-Shirane, Tokai-mura, Ibaraki, Japan
Yoshiteru Aoyagi
Affiliation:
Nuclear Science and Engineering Directorate, Japan Atomic Energy Agency, 2-4 Shirakata-Shirane, Tokai-mura, Ibaraki, Japan
Yoshiyuki Kaji
Affiliation:
Nuclear Science and Engineering Directorate, Japan Atomic Energy Agency, 2-4 Shirakata-Shirane, Tokai-mura, Ibaraki, Japan
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Abstract

Hierarchical modeling based on atomistic and continuum simulations were established to describe the fundamental characteristics of plastic deformation in irradiated materials. Typical irradiation defects of a self-interstitial atom (SIA) loop and vacancy loop are considered. At first atomic models, including a SIA loop and a vacancy as well as a straight dislocation loop in single crystals were constructed. Constant strain is applied to each model and the equilibrium configuration under deformation is calculated by a molecular statics simulation. Maximum shear stresses in various radii of irradiated defects are stored in a database for the continuum mechanics analysis. Then local interaction events between glide dislocation and irradiation defects were introduced through crystal plasticity finite element analysis. In this model the effect of radiation hardening was considered by referring to the experiment. We found that softening after the first yield event is caused by annihilation of irradiation defects resulting from unfaulting of the radiation defects.

Type
Articles
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Chung, H. M., Ruther, W. E., Sanecki, J. E., et al. ., J. Nucl. Mater. 239, 6179 (1996).Google Scholar
2. Chung, H. M. and Shack, W. J., Energy Technology Division Argonne National Laboratory, Washington, DC (2006).Google Scholar
3. Tsukada, T., Corr. Eng. 52, 6672 (2003).Google Scholar
4. Jiao, Z. and Was, G. S., J. Nucl. Mater. 382, 203209 (2008).Google Scholar
5. Mishin, Y., Farkas, D., Mehl, M. J., et al. ., Phys. Rev. B 63, 224106 (2001).Google Scholar
6. Tsuru, T. and Shibutani, Y., J. Comput. Sci. Tech. 2, 559567 (2008).Google Scholar
7. Victoria, M., Baluc, N., Bailat, C., et al. ., J. Nucl. Mater. 276, 114122 (2000).Google Scholar
8. Singh, B. N., Ghoniem, N. M. and Trinkaus, H., J. Nucl. Mater. 307-311, 159170 (2002).Google Scholar
9. Odette, G. R., He, M. Y., Donahue, E. G., et al. ., J. Nucl. Mater. 307-311, 171178 (2002).Google Scholar