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Hg1−x−yCdxZnyTe: Growth, Properties and Potential for Infrared Detector Applications

Published online by Cambridge University Press:  25 February 2011

Debra L. Kaiser  and
Piotr Becla
Debra L. Kaiser
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
Piotr Becla
Affiliation:
MIT Francis Bitter National Magnet Laboratory, Cambridge, MA 02139
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Abstract

Close-spaced isothermal vapor phase epitaxy (VPE) was used to grow quaternary Hg1−x−yCdxZnyTe epillayers on Cd1−zZnzTe substrates. Composition, resistivity, and carrier concentration depth profiles were determined in the epilayers. p-n junctions were produced from material with appropriate properties using the Hg diffusion method. The junctions showed excellent I-V characteristics and high spectral detectivities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 397
Copyright
Copyright © Materials Research Society 1987

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References

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