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Heterostructures of GaAs and AlAs on Silicon: X-Ray Analysis and Excimer Laser Annealing

Published online by Cambridge University Press:  28 February 2011

A. Georgakilas ,
M. Fatemi ,
L. Fotiadis  and
A. Christou
A. Georgakilas
Affiliation:
Research Center of Crete, Crete, Greece
M. Fatemi
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5000
L. Fotiadis
Affiliation:
NRC-NRL Post Doctoral Student
A. Christou
Affiliation:
Naval Research Laboratory, Washington, DC 20375-5000
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Abstract

One micron thick AlAs/GaAs structures have been deposited by molecular beam epitaxy onto high resistivity silicon substrates. Subsequent to deposition, it is shown that Excimer laser annealing up to 120mJ/cm2 at 248nm improves the GaAs mobility to approximately 2000cm2 /v-s. Dislocation density, however, did not decrease up to 180mJ/cm2 showing that improvement in transport properties may not be accompanied by an associated decrease in dislocation density at the GaAs/Si interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 279
Copyright
Copyright © Materials Research Society 1988

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References

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