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Heteronucleation onto Si Surfaces

Published online by Cambridge University Press:  26 February 2011

R. Hull ,
J. C. Bean ,
N. Chand ,
R. E. Leibenguth ,
D. Bahnck ,
S. M. Koch  and
J. S. Harris Jr
R. Hull
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. C. Bean
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
N. Chand
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
R. E. Leibenguth
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
D. Bahnck
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
S. M. Koch
Affiliation:
Materials Science Department, Stanford University, Stanford, CA 94305
J. S. Harris Jr
Affiliation:
Electrical Engineering Department, Stanford University, Stanford, CA 94305
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Abstract

Surface structure and heteronucleation of GaAs, In(Ga)As and Ge onto Si surfaces by Molecular Beam Epitaxy are studied by transmission electron microscopy as functions of substrate orientation and cleaning. We find that Shiraki cleaning of vicinal ( 4 degree misorientation ) (100) Si surfaces can produce significant surface facetting at temperatures ∼ 900°C. Subsequent nucleation of GaAs is then influenced by the facet distribution. Nucleation of InAs onto vicinal (100) Si surfaces exhibits a highly bimodal distribution of nuclei dimensions and anomalously high surface diffusion lengths. Sputter and annealing of Si surfaces produces microroughness of an amplitude a few monolayers high on (211) and vicinal and exact (100) surfaces. Subsequent growth of Si buffer layers increases the surface roughness amplitude slightly on the exact (100) and (211) surfaces and significantly on the vicinal (100) surface. Nucleation densities and surface diffusion lengths of Ge on the Si buffer layers surfaces correlate to the surface roughness amplitude. We also describe techniques for experimental quantification of surface roughness amplitudes and periodicities from electron microscope lattice structure images.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 455
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

(1) See Proc. Mat. Res. Soc. 94, “The Initial Stages of Epitaxial Growth” (ed. Hull, R., Gibson, J.M. and Smith, D. A.) and references thereinGoogle Scholar
(2)Hull, R. and Fischer-Colbrie, A., Appl. Phys. Lett. 50, 851 (1987)Google Scholar
(3)Koch, S. M., Rosner, S. J., Schlom, D. and Harris, J. S. Jr., Proc. Mat. Res. Soc. 67 (ed. Fan, J. C. C. and Poate, J. M.) p. 37.Google Scholar
(4)Chand, N., People, R., Baiocchi, F. A., Wecht, K. W. and Cho, A. Y., Appl. Phys. Lett. 49, 815 (1986)Google Scholar
(5)Bean, J. C. and Sadowski, E. A., J. Vac. Sci. Technol. 20, 137 (1982)Google Scholar
(6)Hull, R., Fischer-Colbrie, A., Rosner, S. J., Koch, S. M. and Harris, J. S., Jr., Appl. Phys. Lett. 51, 1723 (1987)Google Scholar
(7)Hull, R., Fischer-Colbrie, A., Rosner, S. J., Koch, S. M. and Harris, J. S., Jr., Proc. Mat. Res. Soc. 94 (ed. Hull, R., Gibson, J. M. and Smith, D. A.), p. 23Google Scholar
(8)Bean, J. C., Becker, G. E., Petroff, P. M. and Seidel, T. E., J. Appl. Phys. 48, 907 (1977)Google Scholar
(9)Hull, R., Bean, J. C., Leibenguth, R. E., Koch, S. M. and Harris, J. S., Jr. to be published in Proc. 2nd Int. Symp. on Si MBE, Honolulu, Hawaii, Oct. 1987 (Electrochemical Soc., Pennington, NJ).Google Scholar