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Heteroepitaxial Metal Oxides on Silicon by Laser Ablation

Published online by Cambridge University Press:  16 February 2011

D. B. Fenner
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304. Physics Department, Santa Clara University, Santa Clara, CA 95053.
D. K. Fork
Affiliation:
Applied Physics Department, Stanford University, Stanford, CA 94305.
G. A. N. Connell
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304.
J. B. Boyce
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304.
F. A. Ponce
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304.
J. C. Tramontana
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304.
A. M. Viano
Affiliation:
Applied Physics Department, Stanford University, Stanford, CA 94305.
T. H. Geballe
Affiliation:
Applied Physics Department, Stanford University, Stanford, CA 94305.
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Abstract

Thin epitaxial films of cubic - fluorite structured PrO2 and YSZ (yttria- stabilized zirconia) were grown on single crystal silicon substrates using the laser ablation - deposition technique. X-ray diffraction theta two - theta, omega rocking and phi scans indicate a high degree of epitaxial orientation of the films to the Si lattice. The highest quality of epitaxy was obtained with the PrO2 [111] oriented normal to Si(111) surfaces and the cubic YSZ [100] normal to Si(100) surfaces. For both PrO2 and YSZ, high epitaxial quality required the removal of the Si native oxide prior to deposition and careful control of the deposition environment. It was further found that the YSZ films on Si(100) were an excellent surface for subsequent laser ablation of YBCO films by the usual in situ process. The resistivity of this YBCO was ≈ 250 micro-ohm-cm at 300 K, extrapolated to the resistivity -temperature origin, showed a sharp transition to zero resistance at ≈ 85 K and was nearly identical to high quality YBCO films deposited on (bulk) YSZ substrates.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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