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Heteroepitaxial Growth of InP on GaAs with Interface Layer Grown by Flow-Rate Modulation Epitaxy

Published online by Cambridge University Press:  28 February 2011

W. K. Chen ,
J. F. Chen ,
J. C. Chen ,
H.M. Kim ,
L. Anthony ,
C. R. Wie  and
P. L. Liu
W. K. Chen
Affiliation:
Center for Electronic and Electrooptic Materials, State University of New York at Buf-falo, Amherst, N. Y. 14260
J. F. Chen
Affiliation:
Center for Electronic and Electrooptic Materials, State University of New York at Buf-falo, Amherst, N. Y. 14260
J. C. Chen
Affiliation:
Center for Electronic and Electrooptic Materials, State University of New York at Buf-falo, Amherst, N. Y. 14260
H.M. Kim
Affiliation:
Center for Electronic and Electrooptic Materials, State University of New York at Buf-falo, Amherst, N. Y. 14260
L. Anthony
Affiliation:
Center for Electronic and Electrooptic Materials, State University of New York at Buf-falo, Amherst, N. Y. 14260
C. R. Wie
Affiliation:
Center for Electronic and Electrooptic Materials, State University of New York at Buf-falo, Amherst, N. Y. 14260
P. L. Liu
Affiliation:
Center for Electronic and Electrooptic Materials, State University of New York at Buf-falo, Amherst, N. Y. 14260
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Abstract

We have grown and characterized heteroepitaxial films of InP on GaAs. We demonstrate that by using flow-rate modulation epitaxy to grow the interface layer in a two-step process, we can improve the quality of heteroepitaxy films. The full-widths-at-half-maximum of the x-ray rocking curve and the 10-K photoluminescence spectrum for a 6.2-μm-thick InP/GaAs are 144 arcsec and 1.28 meV, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 401
Copyright
Copyright © Materials Research Society 1990

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References

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