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Heteroepitaxial Growth of High Quality GaAs Films on Rapid-Thermal-anealing Processed CaF2/Si(511) Structures

Published online by Cambridge University Press:  26 February 2011

Tanemasa Asano ,
Hiroshi Ishiwara  and
Seijiro Furukawa
Tanemasa Asano
Affiliation:
Department of Electrical Engineering and Computer Science, Santa Clara University, Santa Clara, CA 95053
Hiroshi Ishiwara
Affiliation:
Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama 227, Japan
Seijiro Furukawa
Affiliation:
Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuda, Midoriku, Yokohama 227, Japan
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Abstract

Heteroepitaxial growth of CaF2 films on (511)Si and GaAs films on CaF2/Si(511) structures is investigated. CaF2 films and GaAs films are grown by vacuum evaporation and molecular beam epitaxy, respectively. Ion channeling measurements and replica transmission electron microscopy show that CaF2 films having good crystalline quality and surface steps can be formed by annealing at 900°C for 30 sec after the growth at 550° C. GaAs films having smooth surfaces and good crystalline quality can be grown on the annealed CaF2/Si(511) structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 291
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Asano, T., Ishiwara, H., Lee, H. C., Tsutsui, K., and Furukawa, S., Jpn. J. Appl. Phys. 25, L139 (1985)Google Scholar
2. Tsutsui, K., Asano, T., Ishiwara, H., and Futukawa, S., Proc. 14th Int. Sp GaAs and Related Compounds, Inst. Phys. Conf. Ser. No. 91(Inst. Phys., Bristol, 1988) p. 589 Google Scholar
3. Lee, H. C., Ishiwara, H., Kanemaru, S., and Furukawa, S., Jpn. J. Appl. Phys. 26, L1834 (1987)Google Scholar
4. Schowalter, L. J., Fathaur, R. W., G.Turner, L., and Robertson, C. D., in “Layered Structures, Epitaxy and Interfaces” eds.Gibson, J. M. and Dawson, L. R. (Mat. Res. Soc., Pittsburgh, 1985) p. 151 Google Scholar
5. Asano, T., Ishiwara, H., and Furukawa, S., Jpn. J. Appl. Phys. 27, 1193 (1988)CrossRefGoogle Scholar
6. Pfeiffer, L., Phillips, J. M., Smith, T. P., III, Augustyniak, W. M., and West, K. W., Appl. Phys. Lett. 46, 947 (1985)Google Scholar
7. Wang, W. I., Proc. 2nd Int. Conf. Modulated Semiconductor Strucutres (Kyoto, 1985) p. 257 Google Scholar