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Heteroepitaxial Growth of Cubic Boron Nitride Single Crystal on Diamond Seed Under High Pressure

Published online by Cambridge University Press:  10 February 2011

T. Taniguchi  and
S. Yamaoka
T. Taniguchi
Affiliation:
National Institute for Research in Inorganic Materials, 1–1 Namiki Tsukuba Ibaraki 305 Japan
S. Yamaoka
Affiliation:
National Institute for Research in Inorganic Materials, 1–1 Namiki Tsukuba Ibaraki 305 Japan
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Abstract

Single crystal cubic boron nitride(cBN) was heteroepitaxially grown on a seed crystal of diamond under static high pressure and high temperature of 5.5GPa and 1600–1700°C, respectively, for 10–100 hour. A temperature gradient method was employed for the crystal growth by using lithium boron nitride as a solvent. Initial growth feature of cBN crystal was found on the diamond seed surface after the growing time of 10 minutes. The nucleation sites of the crystals seem to be near the etch pits on the diamond surface which were introduced by the surface dissolution by the solvent for cBN growth. Two types of growth features, island and step growth were typically shown on the surface. It can be seen that grown crystal appearing as a (111) nitrogen face was exhibited with the step growth feature, while the (11n) face exhibited the island growth feature. Considering the growth process under constant P-T growing condition, growth rate of cBN crystal was significantly small as compared to that of diamond.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 472: Symposium I – Polycrystalline Thin Films - Structure, Texture, Properties..III , 1997 , 379
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Wentorf, R.H. Jr, DeVries, R.C. and Bundy, F.P., Science, 208, 873 (1980).Google Scholar
2. Wentorf, R.H. Jr, J. Chem. Phys., 36, 1990 (1962).Google Scholar
3. Mishima, O., Tanaka, J., Yamaoka, S., and Fukunaga, O., Science, 238, 181 (1987).Google Scholar
4. Taniguchi, T., Tanaka, J., Mishima, O., Ohsawa, T., and Yamaoka, S., Appl. Phys. Lett. 62, 576 (1993).Google Scholar
5. Strong, H.M. and Chrenko, R.M., J. Phys. Chem. 75, 1838 (1971).Google Scholar
6. Mishima, O., Yamaoka, S., and Fukunaga, O., J. Appl. Phys., 61, 2822 (1987).Google Scholar
7. Kagamida, M., Kanda, H., Akaishi, M., Nukui, A., Ohsawa, T., and Yamaoka, S., J. Cryst. Growth, 94, 261 (1989).Google Scholar
8. Sei, H., Akaishi, M., Kanda, H., Ohsawa, T., and Yamaoka, S., New Diamond Science and Technology, ed. by Messier, R. et. al., (Mater. Res. Soc. Proc, Pittsburgh, PA 1991), p. 1057.Google Scholar
9. Burns, R.C., Kessler, S., Sibanda, M., Welbourn, C.M. and Welch, D.L., Advanced Materials '96 ed. by Akaishi, M. et. al., (Proc. The 3rd NIRIM Inter. Nat. Symp. on Advans. Mater. 1996), p. 105.Google Scholar
10. Mishima, O., in Application of Diamond Films and Related Materials, ed. by Tzeng, Y., et. al., (Elsevier, Amsterdam, 1991), p. 647.Google Scholar
11. Koizumi, S., Murakami, T., Inuzuka, T., and Suzuki, K., Appl. phys. Lett., 57, 563 (1990).Google Scholar