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Helium Versus Hydrogen Dilution of Silane in the Deposition of Polymorphous Silicon Films: Effects on the Structure and the Transport Properties

Published online by Cambridge University Press:  01 February 2011

O. Saadane
Affiliation:
Laboratoire de Génie Electrique de Paris, (UMR8507 CNRS), Ecole supérieure d'Electricité, Université Paris VI et XI, Plateau de Moulon, 91192 Gif sur Yvette, France
S. Lebib
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UMR7647 CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex, France
A.V. Kharchenko
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UMR7647 CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex, France
V. Suendo
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UMR7647 CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex, France
C. Longeaud
Affiliation:
Laboratoire de Génie Electrique de Paris, (UMR8507 CNRS), Ecole supérieure d'Electricité, Université Paris VI et XI, Plateau de Moulon, 91192 Gif sur Yvette, France
P. Roca i Cabarrocas
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UMR7647 CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex, France
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Abstract

We compare the deposition rate, hydrogen incorporation and optoelectronic properties of hydrogenated polymorphous silicon films produced either by the decomposition of silane-hydrogen or of silane-helium mixtures. Our results clearly show that He dilution allows to drastically reduce the RF power needed to achieve the same deposition rate as in the case of H2 dilution. Infrared spectroscopy and hydrogen effusion experiments show clear differences in the hydrogen bonding and content in both series of films. Interestingly, both He and hydrogen dilution result in films with improved transport properties, in particular the hole diffusion length, with respect to standard amorphous silicon. These results indicate that He dilution is a good alternative to H2 dilution to prepare intrinsic layers for solar cells.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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