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Hall Mobility in Strained SiGe p-Mosfets

Published online by Cambridge University Press:  15 February 2011

L. Garchery ,
I. Sagnes ,
Y. Campidelli ,
M. Berenguer ,
P.A. Badoz ,
Y. Guldner  and
S. Zanier
L. Garchery
Affiliation:
FRANCE TELECOM-CNET, BP 98, 38243 MEYLAN Cedex, FRANCE
I. Sagnes
Affiliation:
FRANCE TELECOM-CNET, BP 98, 38243 MEYLAN Cedex, FRANCE
Y. Campidelli
Affiliation:
FRANCE TELECOM-CNET, BP 98, 38243 MEYLAN Cedex, FRANCE
M. Berenguer
Affiliation:
FRANCE TELECOM-CNET, BP 98, 38243 MEYLAN Cedex, FRANCE
P.A. Badoz
Affiliation:
FRANCE TELECOM-CNET, BP 98, 38243 MEYLAN Cedex, FRANCE
Y. Guldner
Affiliation:
LPMC, ENS, 24 rue Lhomond, 75005 PARIS, FRANCE
S. Zanier
Affiliation:
LPMC, ENS, 24 rue Lhomond, 75005 PARIS, FRANCE
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Extract

One of the limiting factors in the performance of future CMOS integrated circuits is the low hole mobility which causes the transconductance of p-channel transistors to be inferior to those of n-channel devices. One promising way of enhancing hole mobility is to introduce a buried SiGe layer under the gate of p-MOS transistors. The mobility improvement thus results from, i) reduction in surface scattering (by moving carriers away from scattering sites at the Si/SiO2 interface), and ii) higher in-plane hole mobility in biaxally strained SiGe layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 333
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1. Garone, P.M., Venkataraman, V., and Sturm, J.C., IEEE Electron Device Lett. 12, 230 (1991).Google Scholar
2. Glowacki, F., PhD thesis, Université Joseph Fourier, Grenoble, France, 1994.Google Scholar
3. Robbins, D.J., Pidduck, A.J., Glasper, J.L., Young, I.M., and Pickering, C., Thin Solid Films 183, 299 (1989).Google Scholar
4. Bérenguer, M., Straboni, A., Vuillermoz, B., Debenest, P., and Barla, K., Le Vide - les Couches Minces 246, 195 (1989).Google Scholar
5. Sze, S.M., Physics of Semiconductor Devices, 2nd ed. (Wiley-Interscience Publication, New-York, 1981), p 369.Google Scholar
6. Badoz, P.A., Rosencher, E., Torres, J., and Fishman, G., J. Appl. Phys. 62, 890 (1987).Google Scholar
7. Smith, R.A., Semiconductors, 2nd ed. (Cambridge University Press, Cambridge, 1978) p 104.Google Scholar
8. Sagnes, I., PhD thesis, Université Joseph Fourier, Grenoble, France, 1994.Google Scholar
9. Sze, S.M., Physics of Semiconductor Devices, 2nd ed. (Wiley-Interscience Publication, New-York, 1981), p 29.Google Scholar
10. Watt, J.T. and Plummer, J.D., Proceedings of Symposium VLSI Technol., 81, 1987.Google Scholar
11. Garchery, L., Warren, P., Sagnes, I., and Badoz, P.A., to be published in the proceedings of the 1995 MRS Spring Meeting.Google Scholar
12. Cheng, Y.C. and Sullivan, E.A., Surface Science 34, 717 (1973).Google Scholar