Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-28T09:35:37.051Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of Zr Substituted Barium Titanate Thin Films from the Vapor Phase

Published online by Cambridge University Press:  11 February 2011

R. Ganster ,
S. Hoffmann-Eifert  and
R. Waser
R. Ganster
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, D-52425 Jülich, Germany
S. Hoffmann-Eifert
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, D-52425 Jülich, Germany
R. Waser
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich, D-52425 Jülich, Germany
Get access

Abstract

We report on the growth of Ba(Ti1-xZrx)O3 thin films on Pt(111) / TiO2 / SiO2 / Si substrates by means of metal-organic chemical vapor deposition (MOCVD) using liquid precursors. The MOCVD system consists of an AIXTRON AIX-200 horizontal reactor with a TriJet® vaporizer. In the multi-source injection system the different single element precursor solutions were introduced separately in a pulse mode. The focus of our investigations lies on the correlation between processing conditions, growth rate, and film properties, namely stoichiometry, crystal structure, and surface morphology. Dense, polycrystalline Ba(Ti0.63Zr0.37)O3 films were successfully grown on platinum coated silicon substrates at temperatures around 630°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 748: Symposium U – Ferroelectric Thin Films XI , 2002 , U12.2
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Shen, H., Kotecki, D.E., Murphy, R.J., Zaitz, M., Laibowitz, R.B., Shaw, T.M., Saenger, K.L., Banecki, J., Beitel, G., Klueppel, V., Cerva, H., MRS Symp. Proceed. 493, 33–38 (1998).Google Scholar
2. Hitchman, M.L., Jensen, K.F., Chemical Vapor Deposition Principles and Applications, Academic Press, London (1993).Google Scholar
3. Wada, S., Adachi, H., and Kakemono, H., Chazono, H., Mizuno, Y., and Kishi, H., Tsurumi, T., J. Mat. Res. 17, 456 – 464 (2002).Google Scholar
4. Hennings, D., Schnell, A., Simon, G., J. Am. Ceram. Soc. 65, 539 (1982).Google Scholar
5. Hoffmann, S. and Waser, R., Integrated Ferroelectrics 17, 141–152 (1997).Google Scholar
6. Choi, Won Seok, Jang, Bum Sik, Roh, Yonghan, Yi, Junsin, Hong, Byoungyou, J. Non-Crystalline Solids 303, 190–193 (2002).Google Scholar
7. Schäfer, P., Ritter, S., Ganster, R., Ehrhart, P., Hoffmann, S., and Waser, R., Integrated Ferroelectrics 30, 165–173 (2001).Google Scholar
8. Schäfer, P. and Waser, R., Adv. Mater. Opt. Electron. 10, 169–175 (2000).Google Scholar
9. JCPDS – International Centre for Diffraction Data 1997.Google Scholar