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Growth of Stoichiometric bn Films by Pulsed Laser Evaporation

Published online by Cambridge University Press:  25 February 2011

P. T. Murray ,
M. S. Donley  and
N. T. McDevitt
P. T. Murray
Affiliation:
Research Institute, University of Dayton, Dayton, OH 45469
M. S. Donley
Affiliation:
AFWAL/MLBM, Materials Laboratory, Wright-Patterson AFB, OH 45433–6533
N. T. McDevitt
Affiliation:
AFWAL/MLBM, Materials Laboratory, Wright-Patterson AFB, OH 45433–6533
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Abstract

The feasibility of growing stoichiometric thin films of BN by pulsed laser evaporation has been investigated. Films grown under high vacuum conditions were N-deficient. This result is consistent with thermodynamic calculations, which indicate that B metal formation, with concomitant N2 desorption, is energetically favored over BN formation. Stoichiometric films were grown in NH3 with substrate temperatures of 400, 500, and 1000°C. Analysis of films grown under these conditions by grazing incidence x-ray diffraction indicates the films to be highly oriented, hexagonal BN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 469
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Rand, M. H. and Roberts, J. F., J. Electrochem. Soc. 115, 423 (1968).10.1149/1.2411238Google Scholar
2. Hirayama, M. and Shohnu, K., J. Electrochem. Soc. 122, 167 (1975).10.1149/1.2134107Google Scholar
3. Murarka, S. P., Chang, C. C., Wang, D. N. K., and Smith, T. E., J. Electrochem. Soc. 126, 1951 (1979).10.1149/1.2128833CrossRefGoogle Scholar
4. Adams, A. C. and Capio, C. D., J. Electrochem. Soc. 127, 399 (1980).10.1149/1.2129678Google Scholar
5. Yamaguchi, E. and Minakata, M., J. Appl. Phys. 55, 3098 (1984).10.1063/1.333306CrossRefGoogle Scholar
6. Murray, P. T., Wolf, J. D., Mescher, J. A., Grant, J. T., and McDevitt, N. T., Mater. Lett. 5, 250 (1987).10.1016/0167-577X(87)90104-2Google Scholar
7. Mamyrin, B. A., Krataev, V. I., Shmikk, D. V., and Zagulin, V. A., Zh. Eksp. Teor. Fiz. 64, 8 (1973); Sov. Phys.-JETP 37, 45 (1973)Google Scholar
8. Hanke, G. and Muller, K., J. Vac. Sci. Technol. A2, 964 (1984).Google Scholar
9. Chase, M. W., Davies, C. A., Downey, J. R., Frurip, D. J., McDonald, R. A., and Syverud, A. N., JANAF Thermochemical Tables, J. Phys. Chem. Ref. Data 14, 1 (1985).Google Scholar
10. Powder Diffraction File: Set 34, International Centre for Diffraction Data, Swarthmore, PA, 1987, No. 34–421.Google Scholar