Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-28T10:37:05.288Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of Polycrystalline Silicon Carbide on Thin Polysilicon Sacrificial Layers for Surface Micromachining Applications

Published online by Cambridge University Press:  11 February 2011

R.F. Wiser ,
J. Chung ,
M. Mehregany  and
C.A. Zorman
R.F. Wiser
Affiliation:
Department of Electrical Engineering and Computer Science, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH 44106
J. Chung
Affiliation:
Department of Material Science and Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH 44106
M. Mehregany
Affiliation:
Department of Electrical Engineering and Computer Science, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH 44106
C.A. Zorman
Affiliation:
Department of Electrical Engineering and Computer Science, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH 44106
Get access

Abstract

Polycrystalline silicon carbide (poly-SiC) films were deposited by atmospheric pressure chemical vapor deposition (APCVD) at epitaxial growth temperatures on planar, 100 nm-thick polysilicon sacrificial layers using two recipes that included or excluded a pre-growth carbonization step. Poly-SiC films grown using the carbonization-based recipe exhibited a relatively high degree of (111) 3C-SiC texture and had uniform, well-defined, void-free poly-SiC/polysilicon interfaces. In contrast, poly-SiC films grown without carbonization were randomly oriented, had numerous poly-SiC inclusions that sometimes completely penetrated the polysilicon underlayer, and had a higher surface roughness than the films grown with carbonization. Analysis of micromechanical clamped-clamped (C-C) beam resonators fabricated from films grown using the two differing recipes shows that the carbonization step is needed to protect the thin polysilicon sacrificial layer from voids and inclusions and thus maintain the proper spacing between the drive electrodes and the resonant beams.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 741: Symposium J – Nano- and Microelectromechanical Systems (NEMS and MEMS) and Molecular Machines , 2002 , J4.3
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yang, Y.T., Ekinci, K.L., Huang, H.M., Schiavone, L.M., Roukes, M.L., Zorman, C.A. and Mehregany, M., Appl. Phys. Lett., 78, 162 (2001).Google Scholar
2. Wang, J., Butler, J.E., Hsu, D.S.Y., Nyugen, C.T.-C., “CVD Polycrystalline Diamond High-Q Micromechanical Resonators”, in Proc. of the 15th Inter. Conf. on MEMS, Las Vegas NV, Jan. 20–24, 2002, pp. 657–660.Google Scholar
3. Howe, R.T. and Muller, R.S., J. Electrochem. Soc., 130, 1420 (1983).Google Scholar
4. Zorman, C.A., Fleischman, A.J., Dewa, A.S., Mehregany, M., Jacob, C., Nishino, S., and Pirouz, P., J. Appl. Phys., 78, 5136 (1995).Google Scholar
5. Zorman, C.A., Roy, S., Wu, C.H., Fleischman, A.J., and Mehregany, M., J. Mat. Res., 13, 406 (1998).Google Scholar
6. Wiser, R., MS Thesis, CaseWestern Reserve University, Cleveland, Ohio USA, August 2002.Google Scholar
7. Kamins, T., “Polycrystalline Silicon for Integrated Circuits and Displays”, 2nd Edition, Kluwer Academic Publishing, Berlin, 1998.Google Scholar
8. Wischmeyer, F., Wondrack, W., Leidich, D., Niemann, E., Mat. Sci. and Eng. B, 61–62, 563 (1999).Google Scholar
9. Li, J.P., and Steckl, A.J., J. Electrochem. Soc., 142, 634 (1995).Google Scholar
10. Scholz, R., Gösele, U., Niemann, E., and Wischmeyer, F., Appl. Phys. A, 64, 115 (1997).Google Scholar
11. Becourt, N., Ponthenier, J.L., Papon, A.M., and Jaussaud, C., Physica B, 185, 79 (1993).Google Scholar