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Growth of GexSi1−X/Si Alloys on Si (100), (110) and (111) Surfaces

Published online by Cambridge University Press:  22 February 2011

R. Hull ,
J. C. Bean ,
L. Peticolas ,
Y. H. Xie  and
Y. F. Hsieh
R. Hull
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
J. C. Bean
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
L. Peticolas
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
Y. H. Xie
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
Y. F. Hsieh
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

We compare and contrast GexSi1−x alloys grown on Si (100), (110) and (111) surfaces. The geometry of interfacial misfit dislocations are observed to be different on these three surfaces, as the intersections of available ♣111} glide planes are of different symmetries for the different interfaces. In addition, angular factors resolving the applied and line tension stresses onto misfit dislocations vary over the different surfaces, producing different effective stresses for identical layer thicknesses, compositions and microstructures. Finally, markedly different dislocation microstructures are observed on the different surfaces, as geometrical considerations show that partial dislocations may separately propagate on the (110) and (111) surfaces, in contrast to the (100) surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 153
Copyright
Copyright © Materials Research Society 1991

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References

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