Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-02T22:17:32.764Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of Gaas on Si Using Algap Intermediate Layer

Published online by Cambridge University Press:  25 February 2011

N. Noto ,
S. Nozaki ,
T. Egawa ,
T. Soga ,
T. Jimbo  and
K. Umeno
N. Noto
Affiliation:
Shin-Etsu Handotai Co. Ltd., Annaka, Gunma 379-01, Japan
S. Nozaki
Affiliation:
Intel Corporation, Santa Clara, CA 95052, USA
T. Egawa
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
T. Soga
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
T. Jimbo
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
K. Umeno
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Get access

Abstract

We have studied heteroepitaxial growth of GaAs on Si using an AlxGa1−xP intermediate layer in an atmospheric-pressure metal organic chemical vapor deposition (NOCVD) reactor. The crystallinity of the GaAs layer depends on AlP composition(x) of the intermediate layer. The bett crystal quality of GaAs layer is obtained when the AlP composition(x) of the intermediate layer is close to 0.5. The X-ray FWHX of 180 arcs and the etch pit density (EPD) of 2.5 × 107cm−2 were obtained in this GaAs/AlGaP/Si structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 247
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Salerno, J.P., Hill, D.S., Lee, J.W., McCullough, R.E. and Fan, J.C.C., Mat. Res. Soc. Sym. Proc. 116, 117 (1988).Google Scholar
[2] Yamaguchi, M., Yamamoto, A., Tachikawa, T., Itoh, Y. and Suga, N., Appl. Phys. Lett. 53, 2293 (1988).CrossRefGoogle Scholar
[3] Hayafuji, N., Ochi, S., Miyashita, M., Tsugami, N., Murotani, T. and Kawaguchi, A., J. Crystal Growth, 93, 494 (1988).Google Scholar
[4] Soga, T., Hattori, S., Sakai, S., Takeyasu, M. and Umeno, M., Electron. Lett. 20, 916 (1984).Google Scholar
[5] Soga, T., Sakai, S., Takeyasu, N., Umeno, M. and Hattori, S., Proc. 12th Intern. Symp. on GaAs and Related Compounds, Karuizawa 1985, 133 Google Scholar
[6] George, T., Weber, E.R., Wu, A.T., Nozaki, S., Noto, N. and Umeno, M., in this proceedingsGoogle Scholar
[7] Egawa, T., Nozaki, S., Noto, N., Soga, T., Jimbo, T. and Umeno, M., in this proceedingsGoogle Scholar