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Growth of Ferroelectric PLT Thin Films on Various Single Crystal Substrates

Published online by Cambridge University Press:  15 February 2011

Y.M. Kang
Affiliation:
Pohang University of Science & Technology, Department of Materials Science and Engineering, Pohang, 790–784, Korea
J.K. Ku
Affiliation:
Pohang University of Science & Technology, Department of Chemistry, Pohang, 790–784, Korea
S. Baik
Affiliation:
Pohang University of Science & Technology, Department of Materials Science and Engineering, Pohang, 790–784, Korea
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Abstract

Ferroelectric Pb1−xLaxTi1−x/4(x = 0 ∼ 0.28) epitaxial thin films were prepared on MgO(001), SrTiO3(001), and LaAlO3(001) single crystalline substrates using pulsed laser deposition. The change in lattice constants of PLT films by La concentration, x, was investigated systematically for each substrate. RBS studies revealed that the composition of PLT films is consistent with that of the targets. Lattice constants, degree of c-axis orientation, crystal quality of the PLT films were characterized by symmetric and asymmetric X-ray scans. The strain which occurred during the cubic to tetragonal phase transition seemed to be the major factor determining the c-axis orientation configuration, i.e., 90° domain structure and the crystal quality of PLT films.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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