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Growth of Bulk, Polycrystalline Gallium and Indium Nitride at Sub-Atmospheric Pressures

Published online by Cambridge University Press:  10 February 2011

John C. Angus ,
Alberto Argoitia ,
Cliff C. Hayman ,
Long Wang ,
Jeffrey S. Dyck  and
Kathleen Kash
John C. Angus
Affiliation:
Chemical Engineering Dept., Case Western Reserve University, Cleveland, OH 44106
Alberto Argoitia
Affiliation:
Chemical Engineering Dept., Case Western Reserve University, Cleveland, OH 44106
Cliff C. Hayman
Affiliation:
Chemical Engineering Dept., Case Western Reserve University, Cleveland, OH 44106
Long Wang
Affiliation:
Materials Science and Engineering Dept., Case Western Reserve University, Cleveland, OH 44106
Jeffrey S. Dyck
Affiliation:
Physics Dept., Case Western Reserve University, Cleveland, OH 44106
Kathleen Kash
Affiliation:
Physics Dept., Case Western Reserve University, Cleveland, OH 44106
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Abstract

Bulk, polycrystalline gallium nitride and indium nitride were crystallized at sub-atmospheric pressures by saturating the pure metals with nitrogen from a microwave electron cyclotron resonance source. Saturation of Ga/In melts with nitrogen led only to the crystallization of gallium nitride. The polycrystalline samples were wurtzitic. The gallium nitride was well faceted, with narrow Raman lineshapes, and showed near-band-edge and yellow band photo-luminescence at both 4K and 300K. The indium nitride was formed in smaller amounts, was less well faceted, and showed no photoluminescence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 149
Copyright
Copyright © Materials Research Society 1997

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References

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