Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-02T23:49:22.741Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of (0001) ZnO Thin Films on Sapphire

Published online by Cambridge University Press:  10 February 2011

A. J. Drehman  and
P. W. Yip
A. J. Drehman
Affiliation:
Rome Laboratory, USAF, RL/ERX, 80 Scott Dr., Hanscom AFB, MA 01731
P. W. Yip
Affiliation:
Rome Laboratory, USAF, RL/ERX, 80 Scott Dr., Hanscom AFB, MA 01731
Get access

Abstract

Using reactive rf sputtering, we have grown (0001) oriented ZnO films in situ on heated c-axis sapphire substrates, that are promising, particularly in terms of surface roughness, as buffer layers for the subsequent epitaxial growth of III-V nitride films. We compare the effects of on-axis and off-axis sputter geometries on the film epitaxy and smoothness. We also examined the effect of substrate temperature on the growth and smoothness and quality of the film. X-ray diffraction was used to verify the hexagonal ZnO phase, its c-axis orientation and, qualitatively, the degree of its epitaxy. Atomic Force Microscopy (AFM) was used to determine the ZnO growth morphology and roughness. Our best films, obtained by off-axis sputter deposition, have a surface roughness of less than 1 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 337
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Matsuoka, T., Yoshimoto, N., Sasaki, T., Katsui, A., J. Electron. Mater. 21, 157 (1992).Google Scholar
2. Hellman, E. S., Buchanan, D. N. E., Wiesmann, D., Brener, I., MRS Internet Journal, Vol. 1, Article 16 (1996), http://nsr.mij.mrs.org/1/16/complete.htmlGoogle Scholar
3. Strite, S. and Morkoc, H., J. Vac. Sci. Technol. B. 10, 1237 (1992).Google Scholar
4. Takada, Syuichi, J. Appl. Phys., 73, 4739 (1993).Google Scholar
5. Jou, Jwo-Huei, Han, Min-Yung, and Cheng, Duen-Jen, J. Appl. Phys., 71, 4333 (1992).Google Scholar
6. Igasaka, Yasuhiro and Saito, Hiromi, J. Appl. Phys., 70, 3613 (1991).Google Scholar
7. Czternastek, H., Brudnik, A., Jachimowski, M. and Kolawa, E., J. Phys. D: Appl. Phys. 25, 865 (1992).Google Scholar
8. Drehman, Alvin J., Derov, John S., Horrigan, Jane A., Andrews, Robert J., and Linden, Derek S., IEEE Transactions on Applied Superconductivity, 5, 1793 (1995).Google Scholar
9. Nanto, H., Minami, T., Shooji, S., and Takata, S., J. Appl. Phys., 55, 1029 (1984).Google Scholar