Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-02T22:25:15.710Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth Dynamics and Exciton Localization in Strained CdSe Quantum Structures

Published online by Cambridge University Press:  10 February 2011

F. S. Flack ,
A. Hunt ,
H. Hennessey ,
N. Samarth ,
J. Levy ,
V. Nikitin ,
S. A. Crooker ,
D. D. Awschalom  and
M. Al Jassim
F. S. Flack
Affiliation:
Department of Physics, The Pennsylvania State University, University Park, PA 16802
A. Hunt
Affiliation:
Department of Physics, The Pennsylvania State University, University Park, PA 16802
H. Hennessey
Affiliation:
Department of Physics, The Pennsylvania State University, University Park, PA 16802
N. Samarth
Affiliation:
Department of Physics, The Pennsylvania State University, University Park, PA 16802
J. Levy
Affiliation:
Department of Physics, University of California, Santa Barbara, CA 93106
V. Nikitin
Affiliation:
Department of Physics, University of California, Santa Barbara, CA 93106
S. A. Crooker
Affiliation:
Department of Physics, University of California, Santa Barbara, CA 93106
D. D. Awschalom
Affiliation:
Department of Physics, University of California, Santa Barbara, CA 93106
M. Al Jassim
Affiliation:
National Renewable Energy Lab, Golden, Co 80401.
Get access

Abstract

Coherently strained CdSe quantum structures are fabricated under varying dynamical growth conditions during the epitaxy of cubic CdSe on (100) ZnSe. Reflection high energy electron diffraction (RHEED) is employed to monitor the growth mode (2D vs. 3D). Conventional photoluminescence (PL) shows that both growth modes yield quantum structures with high PL efficiencies in which excitons are strongly localized by interface fluctuations at varying length scales. Spatially-resolved, near-field PL from quantum structures formed during 3D growth reveals reproducible fine structure in the PL spectrum attributed to emission from excitons laterally confined to quantum dot-like regions. Transmission electron microscopy (TEM) studies suggest that these observations result from a combination of island growth and strain-driven interdiffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 169
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Leonard, D. et al., Appi. Phys. Lett. 63, 3203 (1993).Google Scholar
2. Marzin, J. Y. et al., Phys. Rev. Lett. 73, 716 (1994).Google Scholar
3. Leon, R. et al., Science 267, 1966 (1995).Google Scholar
4. Awschalom, D. D. and Samarth, N. in Optics ofSemiconductor lteterostructures, edited by F. Hennenberger, S. Schmitt-Rink and E. O. Gobel [Akademie Verlag, Berlin (1993)].Google Scholar
5. Samarth, N. et al., Appl. Phys. Lett. 54, 2680 (1989).Google Scholar
6. O'Donnell, K. P. and Henderson, B., J. Lumin. 52, 133 (1992).Google Scholar
7. Zajicek, H. et al., Appl. Phys, Lett. 62, 717 (1993).Google Scholar
8. Zhu, Z. et al., Appl. Phys. Lett. 63, 1678 (1993).Google Scholar
9. Snyder, C. W., Mansfield, J. F. and Orr, B. G., Phys. Rev. B 46, 9551 (1992), C. W. Snyder, B. G. Orr, D. Kessler and L. M. Sander, Phys. Rev. Lett. 66, 3032 (1991).Google Scholar
10. Hennessey, H. and Samarth, N., (unpublished).Google Scholar
11. Rosenauer, A. et al., J. Cryst. Growth 152, 42 (1995).Google Scholar
12. Hefetz, Y. et al., Phys. Rev. B 34, 4423 (1986).Google Scholar
13. Collins, R. W., Paesler, M. A. and Paul, W., Sol. State Commum. 34, 833 (1980).Google Scholar
14. Levy, J. et al., submitted for publication (1995), J. Levy et al., J. Appl. Phys. (accepted for publication) (1996).Google Scholar