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Growth, Doping, Device Development and Characterization of CVD Beta-SiC Epilayers on Si(100) and Alpha-SiC(0001)

Published online by Cambridge University Press:  25 February 2011

H. Kong ,
H. J. Kim ,
J. A. Edmond ,
J. W. Palmour ,
J. Ryu ,
C. H. Carter Jr. ,
J. T. Glass  and
R. F. Davis
H. Kong
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7907, Raleigh, NC 27695-7907
H. J. Kim
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7907, Raleigh, NC 27695-7907
J. A. Edmond
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7907, Raleigh, NC 27695-7907
J. W. Palmour
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7907, Raleigh, NC 27695-7907
J. Ryu
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7907, Raleigh, NC 27695-7907
C. H. Carter Jr.
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7907, Raleigh, NC 27695-7907
J. T. Glass
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7907, Raleigh, NC 27695-7907
R. F. Davis
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Box 7907, Raleigh, NC 27695-7907
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Abstract

Monocrystalline β-SiC films have been chemically vapor deposited on Si(100) and c-SiC(0001) at 1660K-1823K and 0.1 MPa using SiH4 and C2H4 carried in H2. Films grown directly on Si(100) contained substantial concentrations of dislocations, stacking faults and antiphase boundaries (APB); those on α-SiC(0001) contained double positioning boundaries. Both the APBs and the double positioning boundaries were eliminated by using off-axis orientations of the respective substrates. Films produced on Si(100) have also been doped during growth and via ion implantation with B or Al (p-type) or P or N (n-type) at LN, room and elevated temperatures. Results from the former procedure showed the ionized dopant/total dopant concentration ratios for N, P, B and Al to be 0.1, 0.2, 0.002 and 0.01, respectively. The solubility limits of N, P and B at 1660K were determined to be ∼ 2E20, 1E18 and 8E18 cm−3, respectively; that of Al exceeds 2E19 cm−3. High temperature ion implantation coupled with dynamic and post annealing resulted in a markedly reduced defect concentration relative to that observed in similar research at the lower temperatures. Schottky diodes, p-n junctions, and MOSFET devices have been fabricated. The p-n junctions have the characteristics of insulators containing free carriers and deep level traps. The MOSFETs show very good I-V characteristics up to 673K, but have not been optimized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 233
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Kim, H.J. and Davis, R.F., paper accepted for publication in the Journal of the Electrochemical Society.Google Scholar
2. Heteroepitaxy on Silicon, edited by Fan, J.C.C. and Poate, J.M., Materials Research Society Symposia Proceedings Vol.67, (Materials Research Society, Pittsburgh, PA, 1986).Google Scholar
3. Shibahara, K., Saito, T., Nishino, S. and Matsunami, H., Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, p. 717.Google Scholar
4. Palmour, J.W., Davis, R.F., Wallett, T.M. and Bhasin, K.B., J. Vac. Sci. Technol. A4, 590 (1986).Google Scholar
5. Pirouz, P., Chorey, C.M. and Powell, J.A., Appl. Phys. Lett. 50, 221 (1987).Google Scholar
6. Kong, H. (private communications).Google Scholar
7. Maszara, W.P., Rozgonyi, G.A., Simpson, L., and Wortman, J.J. in Beam-Solid Interactions and Phase Transformations, edited by Kruz, H., Olson, G.L., and Poate, J.M. (Elsevier, New York, 1986).Google Scholar
8. Yoshida, S., Sasaki, K., Sakuma, E., Misawa, S. and Gonda, S., Appl. Phys. Lett. 46, 766 (1985).Google Scholar
9. Sze, S.M., Physics of Semiconductor Devices, 2nd Ed., John Wiley and Sons, New York (1981), pp. 31.Google Scholar
10. Hagen, S.H., J. Appl. Phys. 39, 1458 (1968).Google Scholar
11. Wu, S.Y. and Campbell, R.B., Solid State Electron. 17, 683 (1974).Google Scholar
12. Segall, B., Alterovitz, S.A., Haugland, E.J. and Matus, L.G., Appl. Phys. Lett. 49, 584 (1986).Google Scholar