Hostname: page-component-669899f699-2mbcq Total loading time: 0 Render date: 2025-04-27T15:32:32.991Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth, Characterization and Spectroscopic Investigations of InI Crystals for Optical and Radiation Detector Applications

Published online by Cambridge University Press:  10 February 2011

K. C. Mandal ,
M. Klugerman ,
L. J. Cirignano ,
L. P. Moy ,
K. S. Shah ,
M. R. Squillante  and
R. N. Bhattacharyya
K. C. Mandal
Affiliation:
Radiation Monitoring Devices, Inc., 44 Hunt Street, Watertown, MA 02172
M. Klugerman
Affiliation:
Radiation Monitoring Devices, Inc., 44 Hunt Street, Watertown, MA 02172
L. J. Cirignano
Affiliation:
Radiation Monitoring Devices, Inc., 44 Hunt Street, Watertown, MA 02172
L. P. Moy
Affiliation:
Radiation Monitoring Devices, Inc., 44 Hunt Street, Watertown, MA 02172
K. S. Shah
Affiliation:
Radiation Monitoring Devices, Inc., 44 Hunt Street, Watertown, MA 02172
M. R. Squillante
Affiliation:
Radiation Monitoring Devices, Inc., 44 Hunt Street, Watertown, MA 02172
R. N. Bhattacharyya
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401
Get access

Abstract

Single crystals of InI (Eg = 2.01 eV at 300K) have been grown by vertical Bridgman technique using zone refined (ZR) starting materials. The quality of the grown crystal has been evaluated by X-ray diffraction (XRD), Electron probe microanalysis (EPMA) and Photoelectron spectroscopy (XPS). Chemically etched crystal wafer has been used to fabricate optical and nuclear detectors. The results are presented in this paper.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 597
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Derenzo, S.E., Moses, W.W., Jackson, H.G., Turko, B.T., Cahoon, J.L., Geyer, A.B. and Vuletich, T., IEEE Trans. Nuc. Sci., NS–36, 1084 (1989).Google Scholar
2. Shah, K.S., Lund, J.C., Olschner, F., Moy, L.P. and Squillante, M.R., IEEE Trans. Nucl. Sci. NS–36, 199(1989).Google Scholar
3. Shah, K.S., Bennett, P., Moy, L.P., Misra, M.M. and Moses, W.W., IEEE Trans. Nucl. Sci., NS–35(1), 89 (1988).Google Scholar
4. Ohno, N., Yoshida, M., Nakamura, K., Nakahara, J. and Kobayashi, K., J. Phys. Soc. Jpn. 53 (1984).Google Scholar
5. Lund, J.C., Shah, K.S., Squillante, M.R. and Sinclair, F., IEEE Trans. Nucl. Sci. NS–35(1), 89 (1988).Google Scholar
6. Powder Diffraction File, JCPDS (1987).Google Scholar
7. Wagner, C.D., Handbook of X-ray and UV Photoelectron Spectroscopy, ed. (Heyden & Sons, London), Ch. 7, 1977.Google Scholar
8. Squillante, M.R., Zhou, C., Zhang, J., Moy, L.P. and Shah, K.S., presented at the 1992 IEEE Nucl. Sc. Symposium, October 1992, Orlando, FL.Google Scholar