Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-24T09:09:25.413Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Properties of Lattice Matched GaAsSbN Epilayer on GaAs for Solar Cell Applications

Published online by Cambridge University Press:  01 February 2011

Sudhakar Bharatan ,
Shanthi Iyer ,
Kevin Matney ,
Ward J. Collis ,
Kalyan Nunna ,
Jia Li ,
Liangjin Wu ,
Kristopher McGuire  and
Laurie E. McNeil
Sudhakar Bharatan
Affiliation:
[email protected], North Carolina A&T State University, Electrical and Computer Engineering, 1601 East market st,, Greensboro, NC, 27411, United States
Shanthi Iyer
Affiliation:
[email protected], North Carolina A&T State University, Electrical and Computer Engineering, United States
Kevin Matney
Affiliation:
[email protected], Bede Scientific Inc., United States
Ward J. Collis
Affiliation:
[email protected], North Carolina A&T State University, Electrical and Computer Engineering, United States
Kalyan Nunna
Affiliation:
[email protected], North Carolina A&T State University, Electrical and Computer Engineering, United States
Jia Li
Affiliation:
[email protected], North Carolina A&T State University, Electrical and Computer Engineering, United States
Liangjin Wu
Affiliation:
[email protected], North Carolina A&T State University, Electrical and Computer Engineering, United States
Kristopher McGuire
Affiliation:
[email protected], University of North Carolina, Chapel Hill, Department of Physics and Astronomy, United States
Laurie E. McNeil
Affiliation:
[email protected], University of North Carolina, Chapel Hill, Department of Physics and Astronomy
Get access

Abstract

In this work, the growth and characterization of GaAsSbN epilayers nearly lattice matched to GaAs, grown in an elemental solid source molecular beam epitaxy (MBE) system with a RF plasma nitrogen source, are discussed. The Sb and N compositions of the nearly lattice matched layers are 2.6% and 6.8%, respectively, as determined by high resolution x-ray diffraction (HRXRD) and secondary ion mass spectroscopy (SIMS) analysis. The layers are found to be fully strained as evidenced by the presence of Pendellosung fringes on the x-ray diffraction spectra.

Effects of in-situ and ex-situ annealing on the low temperature photoluminescence (PL) characteristics are discussed. The 10 K PL peak energy of 1 eV with a FWHM of 18 meV has been achieved on ex-situ annealed samples in N ambient. The temperature dependence of PL peak energy exhibits “S-shaped” behavior in the low temperature regime, indicative of the presence of localized excitons. Raman spectroscopy analysis has been carried out to determine the local structural changes on annealing.

Keywords

GaAsSb
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE10-36
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bi, W.G., Tu, C.W., Appl. Phys. Lett. 69, 3710 (1996).Google Scholar
2. Sato, M., Weyers, M., Inst. Phys. Conf. Ser. 129, 555 (1992).Google Scholar
3. Harris, J. S. Jr, Semicond. Sci. Technol. 17, 880 (2002).Google Scholar
4. Geisz, F.F., Friedman, D.J., Olson, J.M., Kurtz, S.R., Keyes, B.M., J. Crystal Growth 195, 401 (1998).Google Scholar
5. Harmand, J.C., Ungaro, G., Ramos, J., Rao, E.V.K., Saint-Girons, G., Teissier, R., Le Roux, G., Largeau, L., Patriarche, G., J. Crystal Growth 553, 227–228 (2001).Google Scholar
6. Bian, L.F., Jiang, D.S., Tan, P.H., Lu, S.L., Sun, B.Q., Li, L.H., Harmond, J.C., Solid State Comm, 132, 707–711 (2004).Google Scholar
7. Wicaksono, S., Yoon, S.F., Tan, K.H., Cheah, W.K., J. Crystal Growth. 274, 355–361 (2005).Google Scholar
8. Wu, L., Iyer, S., Nunna, K., Li, J., Bharatan, S., Collis, W., and Matney, K., J. Crystal Growth 279 293–302 (2005)Google Scholar
9. Orders, P.J. and Usher, B.F., Appl. Phys. Lett. 50, 980–982 (1987).Google Scholar
10. Buyanova, I.A., Chen, W.M., Monemar, B., Xin, H.P. and Tu, C.W. Appl. Phys. Lett. 75, 3782 (1999).Google Scholar
11. Varshni, Y. P., Physica (Utrecht) 34, 149 (1967).Google Scholar
12. Blackmore, J.S., J. Appl. Phys. 53, R123 (1982).Google Scholar
13. Lourenco, S.A., Dias, I.F.L., Pocas, L.C., and Duarte, J.L., J. Appl. Phys. 93, 4475 (2003).Google Scholar
14. Pinault, M.A. and Tournie, E., Appl. Phys. Lett. 78, 1562 (2001).Google Scholar
15. Shirakata, S., Kondow, M. and Kitatani, T., Appl. Phys. Lett. 79, 54 (2001).Google Scholar