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Growth and properties of epitaxial PbSe on Si(111) and Si(100) without buffer layer

Published online by Cambridge University Press:  15 February 2011

P. Müller ,
A.N. Tiwari  and
H. Zogg
P. Müller
Affiliation:
AFIF, ETH-Trakt Technopark, Pfingstweidstr. 30, CH-8005 Zürich, Tel. ++41 1 445 1475, FAX ++41 1 445 1499, e-mail: [email protected]
A.N. Tiwari
Affiliation:
AFIF, ETH-Trakt Technopark, Pfingstweidstr. 30, CH-8005 Zürich, Tel. ++41 1 445 1475, FAX ++41 1 445 1499
H. Zogg
Affiliation:
AFIF, ETH-Trakt Technopark, Pfingstweidstr. 30, CH-8005 Zürich, Tel. ++41 1 445 1475, FAX ++41 1 445 1499
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Narrow gap IV-VI materials like PbS, PbSnSe and PbSnTe are used for infrared detector device fabrication [1,2]. Earlier an intermediate Ila-fluoride buffer layer, which consisted of a BaF2/CaF2-stack of about 2000 Å thickness, was used to get epitaxial high quality layers on silicon substrates. This buffer is now reduced to a much thinner layer of only about 20 Å thick CaF2, regardless the large lattice mismatch between layer and substrate [3,4,5]. The question therefore arises if high quality IV-VI layers can be grown on Si-substrates without any buffer layer as e.g. in CdTe/Si or GaAs/Si systems.

The aim of this work is to grow IV-VI layers directly on Si-substrates without any buffer layers to study the growth kinetics and epitaxial quality. PbSe was chosen as a representant of IV-VI materials, and layers were grown on (111)- and (100)-oriented silicon substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 133
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

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