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Growth and Polarity Control of GaN and AlN on Carbon-face SiC by Metalorganic Vapor Phase Epitaxy

Published online by Cambridge University Press:  01 February 2011

Yi Fu ,
Xianfeng Ni ,
Jingqiao Xie ,
N Biyikli ,
Qian Fan ,
S Chevtchenko ,
Ü Özgür ,
Hadis Morkoç ,
You Ke  and
Robert Devaty
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Yi Fu
Affiliation:
[email protected], Virginia Commonwealth University, Dept of Electrical and Computer Engineering, 601 West Main Street, Richmond, VA, 23284, United States
Xianfeng Ni
Affiliation:
[email protected], Virginia Commonwealth University, Richmond, VA, 23284, United States
Jingqiao Xie
Affiliation:
[email protected], Virginia Commonwealth University, Richmond, VA, 23284, United States
N Biyikli
Affiliation:
[email protected], Virginia Commonwealth University, Richmond, VA, 23284, United States
Qian Fan
Affiliation:
[email protected], Virginia Commonwealth University, Richmond, VA, 23284, United States
S Chevtchenko
Affiliation:
[email protected], Virginia Commonwealth University, Richmond, VA, 23284, United States
Ü Özgür
Affiliation:
[email protected], Virginia Commonwealth University, Richmond, VA, 23284, United States
Hadis Morkoç
Affiliation:
[email protected], Virginia Commonwealth University, Richmond, VA, 23284, United States
You Ke
Affiliation:
[email protected], University of Pittsburgh, Pittsburgh, PA, 15260, United States
Robert Devaty
Affiliation:
[email protected], University of Pittsburgh, Pittsburgh, PA, 15260, United States
W. J. Choyke
Affiliation:
[email protected], University of Pittsburgh, Pittsburgh, PA, 15260, United States
C. K. Inoki
Affiliation:
[email protected], State University of New York, Albany, NY, 12222, United States
T. S. Kuan
Affiliation:
[email protected], State University of New York, Albany, NY, 12222, United States
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Abstract

Growth and polarity control of GaN and AlN on carbon-face SiC (C-SiC) by metalorganic vapor phase epitaxy (MOVPE) are reported. The polarities of GaN and AlN layers were found to be strongly dependent on the pre-growth treatment of C-SiC substrates. A pre-flow of trimethyaluminum (TMAl) or a very low NH3/TMAl ratio results in Al(Ga)-polarity layers on C-SiC. Otherwise, N-polarity layers resulted. The polarities of AlN and GaN layers were conveniently determined by their etching rate in KOH or H3PO4, a method reported earlier. We suggest that the Al adatoms, which have a high sticking coefficient on SiC, form several Al adlayers on C-SiC and change the incorporation sequence of Ga(Al) and N leading to metal polarity surface. In addition, the hexagonal pyramids, typical on N-polarity GaN surface, are absent on N-polarity GaN on off-axis C-SiC owing to high density of terraces on off-axis C-SiC. The properties of GaN layers grown on C-SiC are studied by X-ray diffraction.

Keywords

III-Vthin filmmetalorganic deposition
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I07-37
Copyright
Copyright © Materials Research Society 2007

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References

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