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Growth and Electronic Properties of Nanocrystalline Si

Published online by Cambridge University Press:  01 February 2011

Vikram Dalal ,
Kamal Muthukrishnan ,
Satya Saripalli ,
Dan Stieler  and
Max Noack
Vikram Dalal
Affiliation:
[email protected], Iowa State University, Electrical and Comp. Engr., Coover Hall, Ames, Iowa, 50014, United States, 5152941077, 5152949584
Kamal Muthukrishnan
Affiliation:
[email protected], Iowa State University, Ames, Iowa, 50011, United States
Satya Saripalli
Affiliation:
[email protected], Iowa State University, Ames, Iowa, 50011, United States
Dan Stieler
Affiliation:
[email protected], Iowa State University, Ames, Iowa, 50011, United States
Max Noack
Affiliation:
[email protected], Iowa State University, Ames, Iowa, 50011, United States
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Abstract

Nanocrystalline Silicon is an important electronic materials for solar cells, for display devices and for sensors. In this paper, we discuss the influence of ions on the growth and properties of thenanocrystalline Si:H material. Using a unique growth geometry, combination of hot wire and ECR plasma growth, we show that low energy ion bombrdment is beneficial for growing high quality materials. Ion bombardment by H is shown to etch the films during growth and also promote crystallinity. The results on film growth are compared with simulations of growth using the SRIM program. The electronic properties measured include mobilities of both electrons and holes in device-type structures, carrier lifetimes, diffusion lengths, defect densities and capture cross-sections for holes. Electron mobility is found to increase with grain size, with a minimum mobility being in the range of 1 cm2/V-s. The hole mobility is also in this range, and three different methods of measuring it give approximately the same value. The capture cross-section for holes is of the order of 1-2 × 10-16 cm2. The lifetime of carriers is found to depend inversely on the defect density, implying that the recombination is trap controlled.

Keywords

Simicrostructureplasma-enhanced CVD (PECVD) (chemical reaction)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A13-01
Copyright
Copyright © Materials Research Society 2006

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References

1. Yamamoto, Kenji, Yoshimi, Masashi, Tawada, Yuko, Fukuda, Susumu, Sawada, Toru, Meguro, Tomomi, Takata, Hiroki, Suezaki, Takashi, Koi, Yohei, Katsuhiko Hayashi Solar Energy Mater. And Solar Cells, 74, 449 (2002)Google Scholar
2. Shah, A. V., Meier, J., Vallat-Sauvain, E., Wyrsch, N., Kroll, U., Droz, C. and Graf, U., Solar Energy Mater. And Solar cells, 78, 469 (2003)Google Scholar
3. Rech, B., Kluth, O., Repmann, T., Roschek, T., Springer, J., Müller, J., Finger, F., Stiebig, H. and Wagner, H., Solar Energy Mater. And Solar Cells, 74, 439 (2002)Google Scholar
4. Yamamoto, K., Nakajima, A., Yoshimi, M., Sawada, T., Fukuda, S., Hayashi, K., Ichikawa, M., Tawada, Y., Proc. Of 29th. IEEE Photovolt. Spec. Conf.(2002), p.1110 Google Scholar
5. Sazonov, A., Striakhilev, D., Lee, C-H, and Nathan, A.: Proceedings of the IEEE,. 93, No. 8, (2005).Google Scholar
6. Chen, I-C and Wagner, S.: IEE Proc.- Circuits, Devices Syst., Vol. 150, No. 4, 2003.Google Scholar
7. Lee, C-H., Sazonov, A., and Nathan, A: Applied Phys. Lett. 86, 222106 (2005).Google Scholar
8. Kondo, M., Solar Energy Materials and Solar Cells, 78, 543(2003 )Google Scholar
9. Matsuda, A., J. Non-Cryst. Solids, 338–340, 1(2004)Google Scholar
10. Kalache, B., A.Kosarev, Vanderhaghen, R. and Cabarrocas, P. Roca i, J. Appl. Phys. 93, 1263(2003)Google Scholar
11. Dalal, Vikram L., Graves, J. and Leib, J., Appl. Phys. Lett., 85, 1413(2004)Google Scholar
12. Dalal, Vikram and Sharma, Puneet, Appl. Phys. Lett. 86, 103510 (2005)Google Scholar
13. Dalal, Vikram L., Welsh, Matt, Noack, Max and Zhu, J. H., IEE Proc.-Circuits, Devices and Syst. 150, 316(2003)Google Scholar
14. Dalal, Vikram L., Seberger, Paul, Ring, Matt and Sharma, Puneet, Thin Solid Films 430, 91(2003)Google Scholar
15.See, for example, Lampert, M. A. and Mark, P., “Current Injection in Solids”, (Academic Press, 1970)Google Scholar
16.See, for example, Streetman, B. and Banerjee, A., “Solid State Electronic Devices” (Prentice Hall, NY, 5th. Ed.) Ch.5.Google Scholar
17.See, for example, SRIM program website, www.srim.orgGoogle Scholar
18.Nanlin Wang and V.L.Dalal, J. Non_cryst. Solids (To be published)Google Scholar