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Growth and Composition of LPCVD Silicon Oxynitride Films

Published online by Cambridge University Press:  22 February 2011

F. H. P. M. Habraken  and
A. E. T. Kuiper
F. H. P. M. Habraken
Affiliation:
Technical Physics Department,Utrecht State University, P.O. Box 80.000, 3508 TA Utrecht,The Netherlands
A. E. T. Kuiper
Affiliation:
Philips Research Laboratories, 5600 JA Eindhoven,The Netherlands
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Abstract

Silicon oxynitride films with various O/N concentration ratios were deposited in a Low Pressure Chemical Vapour Deposition process from SiH2Cl2, N2O and NH3 or ND3. The resulting films were analysed with respect to their chemical compositions using a number of high energy ion beam methods. The results of the analysis are related to the growth kinetics. It is suggested that the SiH2Cl2 decomposes more difficult on growth surfaces which contain more oxygen. The effect is attributed to the larger electronegativity of oxygen compared to nitrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 48: Symposium E – Applied Materials Characterization , 1985 , 395
Copyright
Copyright © Materials Research Society 1985

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References

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