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Growth and characterization of orientation patterned GaAs crystals for non-linear optical frequency conversion

Published online by Cambridge University Press:  23 May 2011

O. Martínez ,
M. Avella ,
V. Hortelano ,
J. Jiménez ,
M. Snure ,
C. Lynch  and
D. Bliss
O. Martínez
Affiliation:
Optronlab Group, Dpto. Física de la Materia Condensada, Centro I+D, Univ. de Valladolid, Paseo de Belén 1, 47011 Valladolid, Spain
M. Avella
Affiliation:
Optronlab Group, Dpto. Física de la Materia Condensada, Centro I+D, Univ. de Valladolid, Paseo de Belén 1, 47011 Valladolid, Spain
V. Hortelano
Affiliation:
Optronlab Group, Dpto. Física de la Materia Condensada, Centro I+D, Univ. de Valladolid, Paseo de Belén 1, 47011 Valladolid, Spain
J. Jiménez
Affiliation:
Optronlab Group, Dpto. Física de la Materia Condensada, Centro I+D, Univ. de Valladolid, Paseo de Belén 1, 47011 Valladolid, Spain
M. Snure
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Hanscom AFB, MA 01731, U.S.A
C. Lynch
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Hanscom AFB, MA 01731, U.S.A
D. Bliss
Affiliation:
Air Force Research Laboratory, Sensors Directorate, Hanscom AFB, MA 01731, U.S.A
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Abstract

Orientation patterned (OP)-GaAs crystals have high potential as non linear optical systems. Mid-infrared and terahertz lasers sources can be fabricated with these crystals by frequency conversion from shorter wavelength sources. The optical propagation losses are critical; therefore, the OP-GaAs crystals must have high quality with low incorporation of defects and high homogeneity to reduce the refractive index fluctuations. Defects with electro-optic signature must be characterized in order to reduce their presence. Cathodoluminescence studies of these crystals permit the distribution of the main defects to be established, both extended and point defects. Special attention is paid to the role of the walls between the two domain orientations, and to the incorporation of impurities in Si-doped samples.

Keywords

III-Vvapor phase epitaxy (VPE)luminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1288: Symposium G – Novel Fabrication Methods for Electronic Devices , 2011 , mrsf10-1288-g06-07
Copyright
Copyright © Materials Research Society 2011

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