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Growth and Characterization of Optical and Electrical Properties of ZnO Nano- and Microwires

Published online by Cambridge University Press:  01 February 2011

Marius Grundmann
Affiliation:
mailto:[email protected], University of Leipzig, Institute of Experimental Physics II, Linnéstraße 5, Leipzig 04103, Germany
Andreas Rahm
Affiliation:
[email protected], University of Leipzig, Institute of Experimental Physics II, Linnéstraße 5, Leipzig 04103, Germany
Thomas Nobis
Affiliation:
[email protected], University of Leipzig, Institute of Experimental Physics II, Linnéstraße 5, Leipzig 04103, Germany
Holger von Wenckstern
Affiliation:
[email protected], University of Leipzig, Institute of Experimental Physics II, Linnéstraße 5, Leipzig 04103, Germany
Christian Czekalla
Affiliation:
[email protected], University of Leipzig, Institute of Experimental Physics II, Linnéstraße 5, Leipzig 04103, Germany
Jörg Lenzner
Affiliation:
[email protected], University of Leipzig, Institute of Experimental Physics II, Linnéstraße 5, Leipzig 04103, Germany
Michael Lorenz
Affiliation:
[email protected], University of Leipzig, Institute of Experimental Physics II, Linnéstraße 5, Leipzig 04103, Germany
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Abstract

ZnO nanowires are readily fabricated with a novel and unique, high-pressure pulsed laser deposition process developed recently by us. It allows the flexible and reproducible control of morphology, diameter, lenght and composition. Furthermore, we report on the electrical characterization as well as stimulated emission from a zinc oxide (ZnO) microcrystals grown by carbothermal evaporation observed by spatially resolved photoluminescence (PL) and high excitation spectroscopy (HES).

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Lorenz, M., Kaidashev, E.M, Rahm, A., Nobis, Th., Lenzner, J., Wagner, G., Spemann, D., Hochmuth, H., Grundmann, M., Appl. Phys. Lett. 86, 143113 (2005)Google Scholar
2. Lorenz, M., Kaidashev, E.M., Wenchstern, H.v., Riede, V., Bundesmann, C., Spemann, D., Benndorf, G., Hochmuth, H., Rahm, A., Semmelhack, H.-C., Grundmann, M., Solid State Electronics 47, 2205 (2003)Google Scholar
3. Rahm, A., Lorenz, M., Nobis, Th., Zimmermann, G., Grundmann, M., Fuhrmann, B., Syrowatka, F., Appl. Phys. A (2006)Google Scholar
4. Rahm, A., Nobis, Th., Lorenz, M., Zimmermann, G., Boukos, N., Travlos, A., Grundmann, M., Adv. Sol. St. Phys. 46 (2006)Google Scholar
5. Ohtomo, A., Kawasaki, M., Koida, T., Masubuchi, K., Koinuma, H., Sakurai, Y., Yoshida, Y., Yasuda, T., Segawa, Y., Appl. Phys. Lett. 72, 2466 (1998)Google Scholar
6. Choopun, S., Vispute, R.D., Yang, W., Sharma, R.P., Venkatesan, T., Shen, H., Appl. Phys. Lett. 80, 1529 (2002)Google Scholar
7. Lorenz, M., Lenzner, J., Kaidashev, E.M., Hochmuth, H., Grundmann, M., Ann. Phys. (Leipzig) 13, 39 (2004)Google Scholar
8. von Wenckstern, H., Weinhold, S., Biehne, G., Pickenhain, R., Schmidt, H., Hochmuth, H., Grundmann, M., Adv. Sol. Stat. Phys., 45 (2005)Google Scholar
9. Grundmann, M., The Physics of Semiconductors, An Introduction including Devices and Nanophysics (Springer, Heidelberg, 2006), chap. 8, pp. 197218 Google Scholar
10. Ziegler, E., Heinrich, A., Oppermann, H., Stöver, G., Phys. Stat. Sol. (a) 66, 635 (1981)Google Scholar
11. Jimenez-Gonzalez, A. E., Urueta, J.A. Soto, Suarez-Parra, R., J. Cryst. Growth 192, 430 (1998)Google Scholar
12. Nobis, Th., Kaidashev, E.M., Rahm, A., Lorenz, M., Grundmann, M., Phys. Rev. Lett. 93, 103903 (2004)Google Scholar
13. Nobis, Th., Grundmann, M., Phys. Rev. A 72, 063806 (2005)Google Scholar
14. Czekalla, C., Lenzner, J., Rahm, A., Nobis, T., Grundmann, M., PLMCN proceedings, submittedGoogle Scholar
15. Klingshirn, C., Phys. Stat. Sol. B 71, 547 (1975).Google Scholar
16. Schmidt-Grund, R., Ashkenov, N., Schubert, M., Czakai, W., Faltermeier, D., Benndorf, G., Hochmuth, H., Lorenz, M., Bläsig, J., and Grundmann, M., ICPS Poster (2006)Google Scholar