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Growth and Characterization of Lpe GaAs on GaAs-Coated Si Prepared By Mbe

Published online by Cambridge University Press:  28 February 2011

Shiro Sakai ,
S.S. Chang ,
R.J. Matyi  and
H. Shichijo
Shiro Sakai
Affiliation:
Microfabritech, University of Florida, Larsen Hall, Gainesville, FL 32 611
S.S. Chang
Affiliation:
Microfabritech, University of Florida, Larsen Hall, Gainesville, FL 32 611
R.J. Matyi
Affiliation:
Central Research Laboratories, Texas Instr. Inc., Dallas, TX 75265
H. Shichijo
Affiliation:
Central Research Laboratories, Texas Instr. Inc., Dallas, TX 75265
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Abstract

GaAs has been successfully grown by LPE on partly covered (windowed) GaAs-on-Si substrates prepared by MBE. Almost dislocation-free layers were obtained in narrow stripe windows. The grown layers were characterized by photoluminescence and Hall effect measurement. The photoluminescence polarization indicated that a uniaxial tensile stress along the stripe direction is applied in the mesa stripe LPE layer while it is biaxial in the wide GaAs layer on Si. The stress relaxation in the direction perpendicular to the stripe is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 155
Copyright
Copyright © Materials Research Society 1988

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References

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