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Growth and Characterization of BRS GaInAsp-GaAs Laser Emitting At 0.8μm by Gas-Source Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

C. Jelen ,
S. Slivken ,
J. Diaz ,
M. Erdtmann ,
S. Kim ,
D. Wu  and
M. Razeghi
C. Jelen
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston IL 60208
S. Slivken
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston IL 60208
J. Diaz
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston IL 60208
M. Erdtmann
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston IL 60208
S. Kim
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston IL 60208
D. Wu
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston IL 60208
M. Razeghi
Affiliation:
Center for Quantum Devices, Northwestern University, Evanston IL 60208
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Abstract

GaInAsP-GaAs buried ridge structure lasers emitting at 0.8μm have been fabricated on material grown in two steps by low pressure metalorganic chemical vapor deposition and gas-source molecular beam epitaxy. Preliminary laser results are reported, and the feasibility of using gas-source molecular beam epitaxy for the regrowth of sophisticated laser system is demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 147
Copyright
Copyright © Materials Research Society 1996

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References

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