Hostname: page-component-669899f699-qzcqf Total loading time: 0 Render date: 2025-04-26T18:28:09.518Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Characterization of 2″ 6H-Silicon Carbide

Published online by Cambridge University Press:  10 February 2011

Erwin Schmitt ,
Robert Eckstein ,
Martin Kölbl  and
Amd-Dietrich Weber
Erwin Schmitt
Affiliation:
SiCrystal AG, Heinrich-Hertz-Platz 2, 92275 Eschenfelden, Germany, [email protected]
Robert Eckstein
Affiliation:
SiCrystal AG, Heinrich-Hertz-Platz 2, 92275 Eschenfelden, Germany, [email protected]
Martin Kölbl
Affiliation:
SiCrystal AG, Heinrich-Hertz-Platz 2, 92275 Eschenfelden, Germany, [email protected]
Amd-Dietrich Weber
Affiliation:
SiCrystal AG, Heinrich-Hertz-Platz 2, 92275 Eschenfelden, Germany, [email protected]
Get access

Abstract

For the growth of 2″ 6H-SiC a sublimation growth process was developed. By different means of characterization crystal quality was evaluated. Higher defect densities, mainly in the periphery of the crystals were found to be correlated to unfavourable process conditions. Improvement of thermal boundary conditions lead to a decreased defect density and better homogeneity over the wafer area.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 271
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Lely, J. A., Ber. Deut. Keram. Ges., 32,229 (1955)Google Scholar
[2] Tairov, Yu. M., Tsvetkov, V.F., J. Cryst. Growth 43, 209(1978)10.1016/0022-0248(78)90169-0Google Scholar
[3] Ziegler, G., Lanig, P., Theis, D., Weyrich, C., IEEE TRANSACTIONS ON ELECTRON DEVICES; VOL. ED–30, No. 4, 277 (1983)10.1109/T-ED.1983.21117Google Scholar
[4] Barret, D.L., McHugh, J.P., Hobgood, H.M., Hopkins, R.H., McMullin, P.G., Clarke, R.C., J. Cryst. Growth 128, 358(1993)10.1016/0022-0248(93)90348-ZGoogle Scholar
[5] Tuominen, M., Yakimova, R., Glass, R.C., Tuomi, T., Janzen, E., J. Cryst. Growth 144, 267(1994)10.1016/0022-0248(94)90466-9Google Scholar
[6] Milita, S., Madar, R., Baruchel, J., Mazuelas, A., Materials Science Forum Vols. 264–268, 29(1998)10.4028/www.scientific.net/MSF.264-268.29Google Scholar
[7] Tsvetkov, T., Glass, R., Henshall, D., Asbury, D., Carter, C.H. Jr, Materials Science Forum Vols. 264–268, 3 (1998)10.4028/www.scientific.net/MSF.264-268.3Google Scholar
[8] Hofmann, D., Bickermann, M., Eckstein, R., Kolbl, M., Schmitt, E., Weber, A., Winnacker, A., J. Cryst. Growth (1999), in pressGoogle Scholar